Quantum-Mechanical Model of Interconsistent Amplitude and Dispersion Influences of Structure Imperfections on the Multiple Scattering Pattern for Mapping and Characterization of Strains and Defects in Ion-Implanted Garnet Films

• Дата: 2015
• Автори: Molodkin, V.B., Olikhovskii, S.I., Skakunova, E.S., Len, E.G., Kislovskii, E.N., Reshetnyk, O.V., Vladimirova, T.P., Lizunov, V.V., Skapa, L.N., Lizunova, S.V., Fuzik, E.V., Tolmachev, N.G., Ostafiychuk, B.K., Pylypiv, V.M., Garpul’, O.Z.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут металофізики ім. Г.В. Курдюмова НАН України 2015
• Назва видання: Металлофизика и новейшие технологии
• Теми: Взаимодействия излучения и частиц с конденсированным веществом
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/112280
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Quantum-Mechanical Model of Interconsistent Amplitude and Dispersion Influences of Structure Imperfections on the Multiple Scattering Pattern for Mapping and Characterization of Strains and Defects in Ion-Implanted Garnet Films / V. B. Molodkin, S. I. Olikhovskii, E. S. Skakunova, E. G. Len, E. N. Kislovskii, O. V. Reshetnyk, T. P. Vladimirova, V. V. Lizunov, L. N. Skapa, S. V. Lizunova, E. V. Fuzik, N. G. Tolmachev, B. K. Ostafiychuk, V. M. Pylypiv, and O. Z. Garpul’ // Металлофизика и новейшие технологии. — 2015. — Т. 37, № 8. — С. 1017-1026. — Бібліогр.: 7 назв. — англ.

Numerical simulation of the reciprocal-space maps for ion-implanted single-crystal yttrium—iron garnet films on gadolinium—gallium garnet substrates is carried out and based on the theoretical model of the triple-axes dynamical diffractometry of multilayer crystalline systems with inhomogeneous strain distributions and randomly distributed defects. In this model, the amplitude and dispersion mechanisms of influence of the structure imperfections on diffraction or refraction, absorption and extinction of radiation, respectively, for the coherent and diffuse scattering intensities are interconsistently taken into account for all the layers of the system, using derived recurrent relations between the coherent-scattering amplitudes. The presence of growth defects in both the film and the substrate as well as radiation defects created in subsurface layer of nanometre-scale thickness after 90 keV F⁺ ion implantation are taken into account in the proposed model of the multilayer systems. Using this model, the rocking curves measured from as-grown and ion-implanted samples are also treated for determination of realistic strain-profile parameters and structural-defect characteristics in both implanted films and substrates with the aim of numerical reconstruction of the diffraction patterns from multilayer imperfect single-crystal systems.