Characteristics of interface corrugations in short-period GaAs/AlAs superlattices
GaAs/AlAs supelattices with corrugated interfaces have been investigated by the polarized photoluminescence method. Using the theoretical approach, which associates the linear polarization of exciton photoluminescence with the corrugation parameters, experimental results have been fitted to determin...
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| Datum: | 1998 |
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| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1998
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/114668 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Characteristics of interface corrugations in short-period GaAs/AlAs superlattices / L. Daweritz, H. Grahn, R. Hey, B. Jenichen, K. Ploog, D. Korbutyak, S. Krylyuk, Yu. Kryuchenko, V. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 45-49. — Бібліогр.: 12 назв. — англ. |