2025-02-23T09:53:37-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-114673%22&qt=morelikethis&rows=5
2025-02-23T09:53:37-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-114673%22&qt=morelikethis&rows=5
2025-02-23T09:53:37-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T09:53:37-05:00 DEBUG: Deserialized SOLR response
Crystallization kinetics of Ge₂₂Sb₂₂Tе₅₆ doped with Se and Ni

Crystallization kinetics of Ge₂₂Sb₂₂Tе₅₆ doped with Se and Ni

Effects of Ni and Se incorporation on the crystallization kinetics of Ge:Sb:Te alloys have been studied. Both elements were found to increase the stability of the amorphous structure. The kinetics of crystallization under isothermal treatments indicates that Ni reduces both the barrier for thermal c...

Full description

Saved in:
Bibliographic Details
Main Authors: Garsia-Garsia, E., Yanez-Limon, M., Vorobiev, Y., Espinoza-Beltran, F., Gonzalez-Hernandez, J.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/114673
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Effects of Ni and Se incorporation on the crystallization kinetics of Ge:Sb:Te alloys have been studied. Both elements were found to increase the stability of the amorphous structure. The kinetics of crystallization under isothermal treatments indicates that Ni reduces both the barrier for thermal crystallization and the crystallization rate. Crystallization of samples containing Se is also retarded, possibly due to a stronger bonding of this element in comparison with Te.

Similar Items