Numerical modeling of high current ion beam transport with additional injection of electron beams in drift and accelerating gaps of LIA

The dynamics of a high-current ion beam (HCIB) in the system, consisting of magneto-isolated accelerating gap and the drift gap (DG) of the experimental model of linear induction accelerator (LIA) has been studied. The optimization of the magnetic field geometry, the place and time of the addition...

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Збережено в:
Бібліографічні деталі
Дата:2016
Автори: Karas, V.I., Kornilov, E.A., Manuilenko, O.V., Tarakanov, V.P., Fedorovskaya, O.V.
Формат: Стаття
Мова:English
Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2016
Назва видання:Вопросы атомной науки и техники
Теми:
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/115441
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Numerical modeling of high current ion beam transport with additional injection of electron beams in drift and accelerating gaps of LIA / V.I. Karas’, E.A. Kornilov, O.V. Manuilenko, V.P. Tarakanov, O.V. Fedorovskaya // Вопросы атомной науки и техники. — 2016. — № 6. — С. 165-168. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:The dynamics of a high-current ion beam (HCIB) in the system, consisting of magneto-isolated accelerating gap and the drift gap (DG) of the experimental model of linear induction accelerator (LIA) has been studied. The optimization of the magnetic field geometry, the place and time of the additional electron beam injection, as well as its cross dimension is occurred. It is shown that at found parameters of the beams, the external magnetic field, the injection of the main and additional electron beams, HCIB can be compensated (HCIB and an additional electron beam currents practically equal to the initial values and are equal to each other), so that at the exit from the system, ion beam parameters are suitable for a number important technological applications.