Ohmic contacts to InN-based materials
The key aspects of ohmic contact formation to InN-based materials were investigated. Detailed analysis of studies conducted over the past three decades, allows determining the basic principles of such contacts. The contact structure properties and optimal conditions for them are presented. Different...
Збережено в:
| Дата: | 2016 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Назва видання: | Технология и конструирование в электронной аппаратуре |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/115688 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Ohmic contacts to InN-based materials / P.O. Sai // Технология и конструирование в электронной аппаратуре. — 2016. — № 4-5. — С. 3-14. — Бібліогр.: 52 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The key aspects of ohmic contact formation to InN-based materials were investigated. Detailed analysis of studies conducted over the past three decades, allows determining the basic principles of such contacts. The contact structure properties and optimal conditions for them are presented. Different types of metallization are considered, the advantages and disadvantages of each are determined, including the basic requirements that such contact must meet. There is emphasis on the using multilayer metallization with the barrier layers. In the case of the InAlN/GaN systems, the general approaches of forming ohmic contacts were considered. |
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