On origin of room temperature ferromagnetism in wide gap semiconductors
The emerging field of semiconductor spintronics would be dramatically boosted if a semiconductor exhibiting room-temperature ferromagnetism could be found. Here, we discuss the recent stage of the research, paying particular attention to the understanding of observed room temperature ferromagnetism...
Збережено в:
| Дата: | 2009 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2009
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/116765 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | On origin of room temperature ferromagnetism in wide gap semiconductors / Anna Korbecka, Jacek A. Majewski // Физика низких температур. — 2009. — Т. 35, № 1. — С. 70-74. — Бібліогр.: 45 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The emerging field of semiconductor spintronics would be dramatically boosted if a semiconductor exhibiting room-temperature ferromagnetism could be found. Here, we discuss the recent stage of the research, paying particular attention to the understanding of observed room temperature ferromagnetism in wide band semiconductors, GaMnN and ZnMnO. Since the spinodal decomposition has been observed in these structures, we consider the possibilities to influence density fluctuations of the alloys to obtain ferromagnetic semiconductors with required functionalities. We contrast these compounds with (In,Mn)As and (Ga,Mn)As, where the ferromagnetism is well understood, albeit well below room temperature. |
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