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Quantum oscillations of resistivity in bismuth nanowires
We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain...
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2010
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Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/116969 |
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irk-123456789-1169692017-05-19T03:03:28Z Quantum oscillations of resistivity in bismuth nanowires Condrea, E. Gilewski, A. Наноструктуры при низких температурах We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. Evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximatively the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons. 2010 Article Quantum oscillations of resistivity in bismuth nanowires / E. Condrea, A. Gilewski // Физика низких температур. — 2010. — Т. 36, № 3. — С. 316-320. — Бібліогр.: 17 назв. — англ. 0132-6414 PACS: 73.63.Nm, 73.90.+f http://dspace.nbuv.gov.ua/handle/123456789/116969 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
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Наноструктуры при низких температурах Наноструктуры при низких температурах |
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Наноструктуры при низких температурах Наноструктуры при низких температурах Condrea, E. Gilewski, A. Quantum oscillations of resistivity in bismuth nanowires Физика низких температур |
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We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. Evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximatively the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons. |
format |
Article |
author |
Condrea, E. Gilewski, A. |
author_facet |
Condrea, E. Gilewski, A. |
author_sort |
Condrea, E. |
title |
Quantum oscillations of resistivity in bismuth nanowires |
title_short |
Quantum oscillations of resistivity in bismuth nanowires |
title_full |
Quantum oscillations of resistivity in bismuth nanowires |
title_fullStr |
Quantum oscillations of resistivity in bismuth nanowires |
title_full_unstemmed |
Quantum oscillations of resistivity in bismuth nanowires |
title_sort |
quantum oscillations of resistivity in bismuth nanowires |
publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
publishDate |
2010 |
topic_facet |
Наноструктуры при низких температурах |
url |
http://dspace.nbuv.gov.ua/handle/123456789/116969 |
citation_txt |
Quantum oscillations of resistivity in bismuth nanowires / E. Condrea, A. Gilewski // Физика низких температур. — 2010. — Т. 36, № 3. — С. 316-320. — Бібліогр.: 17 назв. — англ. |
series |
Физика низких температур |
work_keys_str_mv |
AT condreae quantumoscillationsofresistivityinbismuthnanowires AT gilewskia quantumoscillationsofresistivityinbismuthnanowires |
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2023-10-18T20:28:44Z |
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2023-10-18T20:28:44Z |
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1796150304645840896 |