Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions
We discuss time–space symmetry in the processes of phase slippage in Josephson junctions and charge density wave (CDW) stacked junctions. In Josephson junctions phase slip by 2π occurs periodically in time with a period T above critical current with a frequency obeys Josephson relation ν = 1/T = 2...
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| Дата: | 2012 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2012
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117126 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions / Yu.I. Latyshev // Физика низких температур. — 2012. — Т. 38, № 4. — С. 459–461. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117126 |
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dspace |
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irk-123456789-1171262017-05-21T03:02:32Z Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions Latyshev, Yu.I. Квантовые когерентные эффекты в сверхпроводниках и новые материалы We discuss time–space symmetry in the processes of phase slippage in Josephson junctions and charge density wave (CDW) stacked junctions. In Josephson junctions phase slip by 2π occurs periodically in time with a period T above critical current with a frequency obeys Josephson relation ν = 1/T = 2eV/h, where V is the voltage on the junction. In CDW stacks at voltage on the stack above threshold value the CDW dislocation appears in the weakest junction of the stack. This phase dislocation corresponds to the local phase slippage by 2π. With voltage increase a new dislocations appear forming periodic array of dislocations with a period L. The inverse spacing 1/L follows the analog of Josephson equation vF/L = 2eV/h. 2012 Article Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions / Yu.I. Latyshev // Физика низких температур. — 2012. — Т. 38, № 4. — С. 459–461. — Бібліогр.: 7 назв. — англ. PACS: 75.50.+r, 71.45.Lr, 73.40.Gk 0132-6414 http://dspace.nbuv.gov.ua/handle/123456789/117126 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Квантовые когерентные эффекты в сверхпроводниках и новые материалы Квантовые когерентные эффекты в сверхпроводниках и новые материалы |
| spellingShingle |
Квантовые когерентные эффекты в сверхпроводниках и новые материалы Квантовые когерентные эффекты в сверхпроводниках и новые материалы Latyshev, Yu.I. Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions Физика низких температур |
| description |
We discuss time–space symmetry in the processes of phase slippage in Josephson junctions and charge density
wave (CDW) stacked junctions. In Josephson junctions phase slip by 2π occurs periodically in time with a period
T above critical current with a frequency obeys Josephson relation ν = 1/T = 2eV/h, where V is the voltage
on the junction. In CDW stacks at voltage on the stack above threshold value the CDW dislocation appears in the
weakest junction of the stack. This phase dislocation corresponds to the local phase slippage by 2π. With voltage
increase a new dislocations appear forming periodic array of dislocations with a period L. The inverse spacing
1/L follows the analog of Josephson equation vF/L = 2eV/h. |
| format |
Article |
| author |
Latyshev, Yu.I. |
| author_facet |
Latyshev, Yu.I. |
| author_sort |
Latyshev, Yu.I. |
| title |
Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions |
| title_short |
Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions |
| title_full |
Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions |
| title_fullStr |
Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions |
| title_full_unstemmed |
Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions |
| title_sort |
comparison of phase slippage processes in josephson junctions and in charge density wave stacked junctions |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2012 |
| topic_facet |
Квантовые когерентные эффекты в сверхпроводниках и новые материалы |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117126 |
| citation_txt |
Comparison of phase slippage processes in Josephson
junctions and in charge density wave stacked junctions / Yu.I. Latyshev // Физика низких температур. — 2012. — Т. 38, № 4. — С. 459–461. — Бібліогр.: 7 назв. — англ. |
| series |
Физика низких температур |
| work_keys_str_mv |
AT latyshevyui comparisonofphaseslippageprocessesinjosephsonjunctionsandinchargedensitywavestackedjunctions |
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2023-10-18T20:29:05Z |
| last_indexed |
2023-10-18T20:29:05Z |
| _version_ |
1796150320918691840 |