Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅
The state with a giant permittivity (ε~10⁴) and ferromagnetism has been observed above 185 K (including room temperature) in single crystals of diluted semiconductor manganite–ferroelectromagnetic Eu₀.₈Ce₀.₂Mn₂O₅ in the investigations of x-ray diffraction, dielectric and magnetic properties, conduct...
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Дата: | 2010 |
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Мова: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2010
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ / E.I. Golovenchits, V.A. Sanina, V.G. Zalesskii, M.P. Scheglov // Физика низких температур. — 2010. — Т. 36, № 6. — С. 654–664. — Бібліогр.: 23 назв. — англ. |
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irk-123456789-1171762017-05-21T03:02:58Z Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ Golovenchits, E.I. Sanina, V.A. Zalesskii, V.G. Scheglov, M.P. Магнитоэлектрические эффекты в сегнетомагнетиках The state with a giant permittivity (ε~10⁴) and ferromagnetism has been observed above 185 K (including room temperature) in single crystals of diluted semiconductor manganite–ferroelectromagnetic Eu₀.₈Ce₀.₂Mn₂O₅ in the investigations of x-ray diffraction, dielectric and magnetic properties, conductivity. X-ray diffraction study has revealed a layered superstructure along the c axis at room temperature. A model of the state with a giant ε including as-grown 2D layers with doping impurities, charge carriers, and double-exchange coupled Mn³⁺–Mn⁴⁺ ion pairs is suggested. At low temperatures these layers form isolated electrically neutral small-size 1D superlattices, in which de Haas van Alphen oscillations were observed. As temperature grows and hopping conductivity increases, the charge carrier self-organization in the crystal cause formation of a layered superstructure consisting of charged layers (with an excess Mn³⁺ concentration) alternating with dielectric layers of the initial crystal — the ferroelectricity state due to charge ordering. Ferromagnetism results from double exchange between Mn³⁺ and Mn⁴⁺ ions through of charge carriers in the charged layers. 2010 Article Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ / E.I. Golovenchits, V.A. Sanina, V.G. Zalesskii, M.P. Scheglov // Физика низких температур. — 2010. — Т. 36, № 6. — С. 654–664. — Бібліогр.: 23 назв. — англ. 0132-6414 PACS: 75.47.Lx, 76.50.+g, 77.80.–e http://dspace.nbuv.gov.ua/handle/123456789/117176 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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English |
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Магнитоэлектрические эффекты в сегнетомагнетиках Магнитоэлектрические эффекты в сегнетомагнетиках |
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Магнитоэлектрические эффекты в сегнетомагнетиках Магнитоэлектрические эффекты в сегнетомагнетиках Golovenchits, E.I. Sanina, V.A. Zalesskii, V.G. Scheglov, M.P. Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ Физика низких температур |
description |
The state with a giant permittivity (ε~10⁴) and ferromagnetism has been observed above 185 K (including room temperature) in single crystals of diluted semiconductor manganite–ferroelectromagnetic Eu₀.₈Ce₀.₂Mn₂O₅ in the investigations of x-ray diffraction, dielectric and magnetic properties, conductivity. X-ray diffraction study has revealed a layered superstructure along the c axis at room temperature. A model of the state with a giant ε including as-grown 2D layers with doping impurities, charge carriers, and double-exchange coupled Mn³⁺–Mn⁴⁺ ion pairs is suggested. At low temperatures these layers form isolated electrically neutral small-size 1D superlattices, in which de Haas van Alphen oscillations were observed. As temperature grows and hopping conductivity increases, the charge carrier self-organization in the crystal cause formation of a layered superstructure consisting of charged layers (with an excess Mn³⁺ concentration) alternating with dielectric layers of the initial crystal — the ferroelectricity state due to charge ordering. Ferromagnetism results from double exchange between Mn³⁺ and Mn⁴⁺ ions through of charge carriers in the charged layers. |
format |
Article |
author |
Golovenchits, E.I. Sanina, V.A. Zalesskii, V.G. Scheglov, M.P. |
author_facet |
Golovenchits, E.I. Sanina, V.A. Zalesskii, V.G. Scheglov, M.P. |
author_sort |
Golovenchits, E.I. |
title |
Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ |
title_short |
Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ |
title_full |
Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ |
title_fullStr |
Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ |
title_full_unstemmed |
Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ |
title_sort |
charge carrier self-organization in ferroelectromagnetic semiconductors eu₀.₈ce₀.₂mn₂o₅ |
publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
publishDate |
2010 |
topic_facet |
Магнитоэлектрические эффекты в сегнетомагнетиках |
url |
http://dspace.nbuv.gov.ua/handle/123456789/117176 |
citation_txt |
Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ / E.I. Golovenchits, V.A. Sanina, V.G. Zalesskii, M.P. Scheglov // Физика низких температур. — 2010. — Т. 36, № 6. — С. 654–664. — Бібліогр.: 23 назв. — англ. |
series |
Физика низких температур |
work_keys_str_mv |
AT golovenchitsei chargecarrierselforganizationinferroelectromagneticsemiconductorseu08ce02mn2o5 AT saninava chargecarrierselforganizationinferroelectromagneticsemiconductorseu08ce02mn2o5 AT zalesskiivg chargecarrierselforganizationinferroelectromagneticsemiconductorseu08ce02mn2o5 AT scheglovmp chargecarrierselforganizationinferroelectromagneticsemiconductorseu08ce02mn2o5 |
first_indexed |
2023-10-18T20:29:12Z |
last_indexed |
2023-10-18T20:29:12Z |
_version_ |
1796150326223437824 |