Impurity and vacancy effects in graphene
A Green function analysis has been developed for quasiparticle spectrum of a 2D graphene sheet in presence of different types of substitutional disorder, including vacancies. The anomalous character of impurity effects in this system is demonstrated, compared to those in well known doped semicondu...
Збережено в:
| Дата: | 2012 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2012
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117436 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Impurity and vacancy effects in graphene / V.M. Loktev, Yu.G. Pogorelov // Физика низких температур. — 2012. — Т. 38, № 8. — С. 993-1000. — Бібліогр.: 33 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | A Green function analysis has been developed for quasiparticle spectrum of a 2D graphene sheet in presence
of different types of substitutional disorder, including vacancies. The anomalous character of impurity effects in
this system is demonstrated, compared to those in well known doped semiconductors, and explained in terms of
conical singularities in the band spectrum of pure graphene. The criteria for appearance of localized states on
clusters of impurity scatterers and for qualitative restructuring of band spectrum are established and a possibility
for a specific metal/insulator transition at presence of vacancies is indicated. |
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