Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies

Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies

We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)- sapphire substrates. Magnetic force microscopy (MFM) and magnetic measurements with a SQUID magnetometer show clear ferromagnetic behav...

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Бібліографічні деталі
Дата:2011
Автори: Strelchuk, V.V., Bryksa, V.P., Avramenko, K.A., Lytvyn, P.M., Valakh, M.Ya., Pashchenko, V.O., Bludov, O.M., Deparis, C., Morhain, C., Tronc, P.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117606
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies / V.V. Strelchuk, V.P. Bryksa, K.A. Avramenko, P.M. Lytvyn, M.Ya. Valakh, V.O. Pashchenko, O.M. Bludov, C. Deparis, C. Morhain, P. Tronc // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 31-40. — Бібліогр.: 41 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117606
record_format dspace
spelling irk-123456789-1176062017-05-26T03:03:13Z Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies Strelchuk, V.V. Bryksa, V.P. Avramenko, K.A. Lytvyn, P.M. Valakh, M.Ya. Pashchenko, V.O. Bludov, O.M. Deparis, C. Morhain, C. Tronc, P. We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)- sapphire substrates. Magnetic force microscopy (MFM) and magnetic measurements with a SQUID magnetometer show clear ferromagnetic behavior of the films up to room temperature, while they are antiferromagnetic below approximately 200 K. Temperature dependences of the carrier mobility were determined using Raman line shape analysis of the longitudinal optical phonon-plasmon coupled modes. It has been show that the microscopic mechanism for ferromagnetic ordering is coupling mediated by free electron spins of Co atoms. These results bring insight into a subtle interplay between charge carriers and magnetism in MBE-grown Zn₁₋xCoxO films. 2011 Article Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies / V.V. Strelchuk, V.P. Bryksa, K.A. Avramenko, P.M. Lytvyn, M.Ya. Valakh, V.O. Pashchenko, O.M. Bludov, C. Deparis, C. Morhain, P. Tronc // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 31-40. — Бібліогр.: 41 назв. — англ. 1560-8034 PACS 63.20.kk, 75.30.Et, 75.70.-i http://dspace.nbuv.gov.ua/handle/123456789/117606 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)- sapphire substrates. Magnetic force microscopy (MFM) and magnetic measurements with a SQUID magnetometer show clear ferromagnetic behavior of the films up to room temperature, while they are antiferromagnetic below approximately 200 K. Temperature dependences of the carrier mobility were determined using Raman line shape analysis of the longitudinal optical phonon-plasmon coupled modes. It has been show that the microscopic mechanism for ferromagnetic ordering is coupling mediated by free electron spins of Co atoms. These results bring insight into a subtle interplay between charge carriers and magnetism in MBE-grown Zn₁₋xCoxO films.
format Article
author Strelchuk, V.V.
Bryksa, V.P.
Avramenko, K.A.
Lytvyn, P.M.
Valakh, M.Ya.
Pashchenko, V.O.
Bludov, O.M.
Deparis, C.
Morhain, C.
Tronc, P.
spellingShingle Strelchuk, V.V.
Bryksa, V.P.
Avramenko, K.A.
Lytvyn, P.M.
Valakh, M.Ya.
Pashchenko, V.O.
Bludov, O.M.
Deparis, C.
Morhain, C.
Tronc, P.
Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Strelchuk, V.V.
Bryksa, V.P.
Avramenko, K.A.
Lytvyn, P.M.
Valakh, M.Ya.
Pashchenko, V.O.
Bludov, O.M.
Deparis, C.
Morhain, C.
Tronc, P.
author_sort Strelchuk, V.V.
title Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies
title_short Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies
title_full Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies
title_fullStr Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies
title_full_unstemmed Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies
title_sort ferromagnetism in co-doped zno films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2011
url http://dspace.nbuv.gov.ua/handle/123456789/117606
citation_txt Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies / V.V. Strelchuk, V.P. Bryksa, K.A. Avramenko, P.M. Lytvyn, M.Ya. Valakh, V.O. Pashchenko, O.M. Bludov, C. Deparis, C. Morhain, P. Tronc // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 31-40. — Бібліогр.: 41 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:30:11Z
last_indexed 2023-10-18T20:30:11Z
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