X-ray study of dopant state in highly doped semiconductor single crystals
Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of solid solution or under various stages of its decomposition – are shown. The com...
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| Дата: | 2011 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117624 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | X-ray study of dopant state in highly doped semiconductor single crystals / I.L. Shul’pina, R.N. Kyutt, V.V. Ratnikov, I.A. Prokhorov, I.Zh. Bezbakh, M.P. Shcheglov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 62-70. — Бібліогр.: 27 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117624 |
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irk-123456789-1176242017-05-26T03:03:51Z X-ray study of dopant state in highly doped semiconductor single crystals Shul’pina, I.L. Kyutt, R.N. Ratnikov, V.V. Prokhorov, I.A. Bezbakh, I.Zh. Shcheglov, M.P. Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of solid solution or under various stages of its decomposition – are shown. The combination of techniques of X-ray diffraction topography and high resolution X-ray diffractometry, higher sensitive to the crystal lattice strain than that traditionally used is taken as the basis for investigating the crystals with slight and strong absorption of X-rays. These methods were supplemented with digital processing of the topographic images of growth striations and electrical measurements. 2011 Article X-ray study of dopant state in highly doped semiconductor single crystals / I.L. Shul’pina, R.N. Kyutt, V.V. Ratnikov, I.A. Prokhorov, I.Zh. Bezbakh, M.P. Shcheglov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 62-70. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 61.72.Dd, Ff, Ss; 81.05.Cy, Ea http://dspace.nbuv.gov.ua/handle/123456789/117624 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of solid solution or under various stages of its decomposition – are shown. The combination of techniques of X-ray diffraction topography and high resolution X-ray diffractometry, higher sensitive to the crystal lattice strain than that traditionally used is taken as the basis for investigating the crystals with slight and strong absorption of X-rays. These methods were supplemented with digital processing of the topographic images of growth striations and electrical measurements. |
| format |
Article |
| author |
Shul’pina, I.L. Kyutt, R.N. Ratnikov, V.V. Prokhorov, I.A. Bezbakh, I.Zh. Shcheglov, M.P. |
| spellingShingle |
Shul’pina, I.L. Kyutt, R.N. Ratnikov, V.V. Prokhorov, I.A. Bezbakh, I.Zh. Shcheglov, M.P. X-ray study of dopant state in highly doped semiconductor single crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Shul’pina, I.L. Kyutt, R.N. Ratnikov, V.V. Prokhorov, I.A. Bezbakh, I.Zh. Shcheglov, M.P. |
| author_sort |
Shul’pina, I.L. |
| title |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_short |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_full |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_fullStr |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_full_unstemmed |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_sort |
x-ray study of dopant state in highly doped semiconductor single crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117624 |
| citation_txt |
X-ray study of dopant state in highly doped semiconductor single crystals / I.L. Shul’pina, R.N. Kyutt, V.V. Ratnikov, I.A. Prokhorov, I.Zh. Bezbakh, M.P. Shcheglov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 62-70. — Бібліогр.: 27 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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