Non-ohmic conduction in tin dioxide based ceramics with copper addition

The current-voltage characteristics and temperature dependences of electrical conductivity in SnO₂-Co₃O₄-Nb₂O₅-Cr₂O₃-CuO semiconductor ceramics are studied, and possible mechanism of non-ohmic conduction in these materials is discussed. Due to addition of CuO up to 0.5 mol.%, the nonlinearity...

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Бібліографічні деталі
Дата:2011
Автори: Gaponov, A.V., Glot, A.B.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117625
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Non-ohmic conduction in tin dioxide based ceramics with copper addition / A.V. Gaponov, A.B. Glot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 71-76. — Бібліогр.: 24 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1176252017-05-26T03:03:24Z Non-ohmic conduction in tin dioxide based ceramics with copper addition Gaponov, A.V. Glot, A.B. The current-voltage characteristics and temperature dependences of electrical conductivity in SnO₂-Co₃O₄-Nb₂O₅-Cr₂O₃-CuO semiconductor ceramics are studied, and possible mechanism of non-ohmic conduction in these materials is discussed. Due to addition of CuO up to 0.5 mol.%, the nonlinearity coefficient is increased up to 75, and the electric field is decreased down to 3900 V∙cm¹ (at 1 mA∙cm⁻²). It makes CuO addition useful for the preparation of SnO₂-based varistors. It is concluded that the electrical conduction is controlled by grain-boundary barriers. The activation energy of electrical conduction (the barrier height φ) is decreased with an increase in the electric field E. The higher slope of the dependence at high fields can be related to a participation of minority carriers (holes). The addition of more than 0.5 mol.% CuO leads to degradation of the varistor effect due to percolation via quite conductive CuO-based intergranular phase. 2011 Article Non-ohmic conduction in tin dioxide based ceramics with copper addition / A.V. Gaponov, A.B. Glot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 71-76. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 73.30.+y, 73.40.-c, 73.50.Fq http://dspace.nbuv.gov.ua/handle/123456789/117625 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The current-voltage characteristics and temperature dependences of electrical conductivity in SnO₂-Co₃O₄-Nb₂O₅-Cr₂O₃-CuO semiconductor ceramics are studied, and possible mechanism of non-ohmic conduction in these materials is discussed. Due to addition of CuO up to 0.5 mol.%, the nonlinearity coefficient is increased up to 75, and the electric field is decreased down to 3900 V∙cm¹ (at 1 mA∙cm⁻²). It makes CuO addition useful for the preparation of SnO₂-based varistors. It is concluded that the electrical conduction is controlled by grain-boundary barriers. The activation energy of electrical conduction (the barrier height φ) is decreased with an increase in the electric field E. The higher slope of the dependence at high fields can be related to a participation of minority carriers (holes). The addition of more than 0.5 mol.% CuO leads to degradation of the varistor effect due to percolation via quite conductive CuO-based intergranular phase.
format Article
author Gaponov, A.V.
Glot, A.B.
spellingShingle Gaponov, A.V.
Glot, A.B.
Non-ohmic conduction in tin dioxide based ceramics with copper addition
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Gaponov, A.V.
Glot, A.B.
author_sort Gaponov, A.V.
title Non-ohmic conduction in tin dioxide based ceramics with copper addition
title_short Non-ohmic conduction in tin dioxide based ceramics with copper addition
title_full Non-ohmic conduction in tin dioxide based ceramics with copper addition
title_fullStr Non-ohmic conduction in tin dioxide based ceramics with copper addition
title_full_unstemmed Non-ohmic conduction in tin dioxide based ceramics with copper addition
title_sort non-ohmic conduction in tin dioxide based ceramics with copper addition
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2011
url http://dspace.nbuv.gov.ua/handle/123456789/117625
citation_txt Non-ohmic conduction in tin dioxide based ceramics with copper addition / A.V. Gaponov, A.B. Glot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 71-76. — Бібліогр.: 24 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT gaponovav nonohmicconductionintindioxidebasedceramicswithcopperaddition
AT glotab nonohmicconductionintindioxidebasedceramicswithcopperaddition
first_indexed 2023-10-18T20:30:14Z
last_indexed 2023-10-18T20:30:14Z
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