Electromagnetic field quantization in planar absorbing heterostructures
The quantization scheme for the electromagnetic field in planar absorbing heterostructures has been developed. The scheme is based on the field expansion over a complete set of orthonormal modes. We used two types of the field modes. The first one is defined as the field created by a plane wave inci...
Збережено в:
| Дата: | 2011 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117629 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electromagnetic field quantization in planar absorbing heterostructures / V.I. Pipa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 91-97. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117629 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1176292017-05-26T03:02:35Z Electromagnetic field quantization in planar absorbing heterostructures Pipa, V.I. The quantization scheme for the electromagnetic field in planar absorbing heterostructures has been developed. The scheme is based on the field expansion over a complete set of orthonormal modes. We used two types of the field modes. The first one is defined as the field created by a plane wave incident at the surface of the structure from the non-absorbing half space. The second type of modes corresponds to the field generated by electric current fluctuations in the absorbing media. To normalize the field modes, the following conditions were used: 1) the time-averaged Poynting vector attributed to the incident wave equals the density of energy flow of elementary quanta of the field energy; 2) for the given frequency and polarization, the total time-averaged Poynting vector equals to zero. The theory is applied to calculate the rate of spontaneous transitions between electron subbands in a quantum well placed near the absorbing layer that can support the surface phonon or plasmon polaritons. 2011 Article Electromagnetic field quantization in planar absorbing heterostructures / V.I. Pipa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 91-97. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 42.50.Ct, 42.88.+h, 78.20.Ci http://dspace.nbuv.gov.ua/handle/123456789/117629 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The quantization scheme for the electromagnetic field in planar absorbing heterostructures has been developed. The scheme is based on the field expansion over a complete set of orthonormal modes. We used two types of the field modes. The first one is defined as the field created by a plane wave incident at the surface of the structure from the non-absorbing half space. The second type of modes corresponds to the field generated by electric current fluctuations in the absorbing media. To normalize the field modes, the following conditions were used: 1) the time-averaged Poynting vector attributed to the incident wave equals the density of energy flow of elementary quanta of the field energy; 2) for the given frequency and polarization, the total time-averaged Poynting vector equals to zero. The theory is applied to calculate the rate of spontaneous transitions between electron subbands in a quantum well placed near the absorbing layer that can support the surface phonon or plasmon polaritons. |
| format |
Article |
| author |
Pipa, V.I. |
| spellingShingle |
Pipa, V.I. Electromagnetic field quantization in planar absorbing heterostructures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Pipa, V.I. |
| author_sort |
Pipa, V.I. |
| title |
Electromagnetic field quantization in planar absorbing heterostructures |
| title_short |
Electromagnetic field quantization in planar absorbing heterostructures |
| title_full |
Electromagnetic field quantization in planar absorbing heterostructures |
| title_fullStr |
Electromagnetic field quantization in planar absorbing heterostructures |
| title_full_unstemmed |
Electromagnetic field quantization in planar absorbing heterostructures |
| title_sort |
electromagnetic field quantization in planar absorbing heterostructures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117629 |
| citation_txt |
Electromagnetic field quantization in planar absorbing heterostructures / V.I. Pipa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 91-97. — Бібліогр.: 15 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT pipavi electromagneticfieldquantizationinplanarabsorbingheterostructures |
| first_indexed |
2023-10-18T20:30:14Z |
| last_indexed |
2023-10-18T20:30:14Z |
| _version_ |
1796150371900456960 |