Calculation of electron mobility and effect of dislocation scattering in GaN

The electron mobility of GaN has been obtained at various temperatures by the relaxation time approximation method. The effect of dislocation scattering has also been discussed and calculated alongwith other important scattering mechanisms in this material. The results agree with other available...

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Бібліографічні деталі
Дата:2007
Автори: Kundu, J., Sarkar, C.K., Mallick, P.S.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117661
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Calculation of electron mobility and effect of dislocation scattering in GaN / J. Kundu, C.K. Sarkar, P.S. Mallick // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 1-3. — Бібліогр.: 8 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1176612017-05-27T03:02:52Z Calculation of electron mobility and effect of dislocation scattering in GaN Kundu, J. Sarkar, C.K. Mallick, P.S. The electron mobility of GaN has been obtained at various temperatures by the relaxation time approximation method. The effect of dislocation scattering has also been discussed and calculated alongwith other important scattering mechanisms in this material. The results agree with other available experimental and theoretical data. 2007 Article Calculation of electron mobility and effect of dislocation scattering in GaN / J. Kundu, C.K. Sarkar, P.S. Mallick // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 1-3. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 72.20.Dp, 78.35.+c http://dspace.nbuv.gov.ua/handle/123456789/117661 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The electron mobility of GaN has been obtained at various temperatures by the relaxation time approximation method. The effect of dislocation scattering has also been discussed and calculated alongwith other important scattering mechanisms in this material. The results agree with other available experimental and theoretical data.
format Article
author Kundu, J.
Sarkar, C.K.
Mallick, P.S.
spellingShingle Kundu, J.
Sarkar, C.K.
Mallick, P.S.
Calculation of electron mobility and effect of dislocation scattering in GaN
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kundu, J.
Sarkar, C.K.
Mallick, P.S.
author_sort Kundu, J.
title Calculation of electron mobility and effect of dislocation scattering in GaN
title_short Calculation of electron mobility and effect of dislocation scattering in GaN
title_full Calculation of electron mobility and effect of dislocation scattering in GaN
title_fullStr Calculation of electron mobility and effect of dislocation scattering in GaN
title_full_unstemmed Calculation of electron mobility and effect of dislocation scattering in GaN
title_sort calculation of electron mobility and effect of dislocation scattering in gan
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2007
url http://dspace.nbuv.gov.ua/handle/123456789/117661
citation_txt Calculation of electron mobility and effect of dislocation scattering in GaN / J. Kundu, C.K. Sarkar, P.S. Mallick // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 1-3. — Бібліогр.: 8 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT kunduj calculationofelectronmobilityandeffectofdislocationscatteringingan
AT sarkarck calculationofelectronmobilityandeffectofdislocationscatteringingan
AT mallickps calculationofelectronmobilityandeffectofdislocationscatteringingan
first_indexed 2023-10-18T20:30:19Z
last_indexed 2023-10-18T20:30:19Z
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