Magnetic field-stimulated change of photovoltage in solar silicon crystals

Magnetic field-stimulated change of photovoltage in solar silicon crystals

The effect of static magnetic field (B = 0.17 T) on composition of defects and lifetime of charge carriers in solar silicon crystals has been investigated. Studied in this work was the character of changes in electrical characteristic of solar silicon. These changes are dependent on the time elap...

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Видавець:Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Дата:2013
Автори: Korotchenkov, O.O., Steblenko, L.P., Podolyan, A.O., Kalinichenko, D.V., Tesel’ko, P.O., Kravchenko, V.M., Tkach, N.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117665
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Цитувати:Magnetic field-stimulated change of photovoltage in solar silicon crystals / O.O. Korotchenkov, L.P. Steblenko, A.O. Podolyan, D.V. Kalinichenko, P.O. Tesel’ko, V.M. Kravchenko, N.V. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 72-75. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1176652017-05-27T03:06:40Z Magnetic field-stimulated change of photovoltage in solar silicon crystals Korotchenkov, O.O. Steblenko, L.P. Podolyan, A.O. Kalinichenko, D.V. Tesel’ko, P.O. Kravchenko, V.M. Tkach, N.V. The effect of static magnetic field (B = 0.17 T) on composition of defects and lifetime of charge carriers in solar silicon crystals has been investigated. Studied in this work was the character of changes in electrical characteristic of solar silicon. These changes are dependent on the time elapsed after the magnetic treatment. The results have been discussed in terms of spin-dependent processes in the subsystem of structural defects. 2013 Article Magnetic field-stimulated change of photovoltage in solar silicon crystals / O.O. Korotchenkov, L.P. Steblenko, A.O. Podolyan, D.V. Kalinichenko, P.O. Tesel’ko, V.M. Kravchenko, N.V. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 72-75. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 61.72.-y, 68.43.-h, 72.40.+w, 76.60.-k, 81.40.Rs http://dspace.nbuv.gov.ua/handle/123456789/117665 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The effect of static magnetic field (B = 0.17 T) on composition of defects and lifetime of charge carriers in solar silicon crystals has been investigated. Studied in this work was the character of changes in electrical characteristic of solar silicon. These changes are dependent on the time elapsed after the magnetic treatment. The results have been discussed in terms of spin-dependent processes in the subsystem of structural defects.
format Article
author Korotchenkov, O.O.
Steblenko, L.P.
Podolyan, A.O.
Kalinichenko, D.V.
Tesel’ko, P.O.
Kravchenko, V.M.
Tkach, N.V.
spellingShingle Korotchenkov, O.O.
Steblenko, L.P.
Podolyan, A.O.
Kalinichenko, D.V.
Tesel’ko, P.O.
Kravchenko, V.M.
Tkach, N.V.
Magnetic field-stimulated change of photovoltage in solar silicon crystals
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Korotchenkov, O.O.
Steblenko, L.P.
Podolyan, A.O.
Kalinichenko, D.V.
Tesel’ko, P.O.
Kravchenko, V.M.
Tkach, N.V.
author_sort Korotchenkov, O.O.
title Magnetic field-stimulated change of photovoltage in solar silicon crystals
title_short Magnetic field-stimulated change of photovoltage in solar silicon crystals
title_full Magnetic field-stimulated change of photovoltage in solar silicon crystals
title_fullStr Magnetic field-stimulated change of photovoltage in solar silicon crystals
title_full_unstemmed Magnetic field-stimulated change of photovoltage in solar silicon crystals
title_sort magnetic field-stimulated change of photovoltage in solar silicon crystals
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2013
url http://dspace.nbuv.gov.ua/handle/123456789/117665
citation_txt Magnetic field-stimulated change of photovoltage in solar silicon crystals / O.O. Korotchenkov, L.P. Steblenko, A.O. Podolyan, D.V. Kalinichenko, P.O. Tesel’ko, V.M. Kravchenko, N.V. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 72-75. — Бібліогр.: 10 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT kalinichenkodv magneticfieldstimulatedchangeofphotovoltageinsolarsiliconcrystals
AT teselkopo magneticfieldstimulatedchangeofphotovoltageinsolarsiliconcrystals
AT kravchenkovm magneticfieldstimulatedchangeofphotovoltageinsolarsiliconcrystals
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first_indexed 2023-10-18T20:30:20Z
last_indexed 2023-10-18T20:30:20Z
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