Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix
Influence of combined size confinement effect and effect of local laser heating on the first-order Raman spectrum of silicon nanocrystals embedded into SiOx matrix has been studied. Increase of the local temperature of Si nanocrystals caused by laser illumination with the power density up to 1...
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| Дата: | 2013 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117670 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix /A.S. Nikolenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 86-90. — Бібліогр.: 29 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1176702017-05-27T03:05:56Z Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix Nikolenko, A.S. Influence of combined size confinement effect and effect of local laser heating on the first-order Raman spectrum of silicon nanocrystals embedded into SiOx matrix has been studied. Increase of the local temperature of Si nanocrystals caused by laser illumination with the power density up to 10 mW/μm² was estimated from the ratio of the Stokes/anti-Stokes peak intensities. Almost linear dependence of nanocrystals local temperature on the power density of exciting radiation with a rate of 63.6 Km² /mW has been found. The phonon line shape at power densities, when no laser heating effect is registered, was shown to be described well within the correlation length model of phonon confinement of Si nanocrystals with the size L = 9.2 nm. Observed phonon softening and broadening with increase of the exciting power density is considered as temperatureinduced vibration anharmonicity with the decay of optical phonons through three and four-phonon processes and corresponding anharmonic constants have been determined. 2013 Article Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix /A.S. Nikolenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 86-90. — Бібліогр.: 29 назв. — англ. 1560-8034 PACS 61.46.Hk, 63.22.Kn, 78.30.Am http://dspace.nbuv.gov.ua/handle/123456789/117670 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Influence of combined size confinement effect and effect of local laser heating
on the first-order Raman spectrum of silicon nanocrystals embedded into SiOx matrix has
been studied. Increase of the local temperature of Si nanocrystals caused by laser
illumination with the power density up to 10 mW/μm² was estimated from the ratio of
the Stokes/anti-Stokes peak intensities. Almost linear dependence of nanocrystals local
temperature on the power density of exciting radiation with a rate of 63.6 Km² /mW has
been found. The phonon line shape at power densities, when no laser heating effect is
registered, was shown to be described well within the correlation length model of phonon
confinement of Si nanocrystals with the size L = 9.2 nm. Observed phonon softening and
broadening with increase of the exciting power density is considered as temperatureinduced vibration anharmonicity with the decay of optical phonons through three and four-phonon processes and corresponding anharmonic constants have been determined. |
| format |
Article |
| author |
Nikolenko, A.S. |
| spellingShingle |
Nikolenko, A.S. Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Nikolenko, A.S. |
| author_sort |
Nikolenko, A.S. |
| title |
Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_short |
Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_full |
Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_fullStr |
Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_full_unstemmed |
Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix |
| title_sort |
laser heating effect on raman spectra of si nanocrystals embedded into siox matrix |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2013 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117670 |
| citation_txt |
Laser heating effect on Raman spectra of Si nanocrystals
embedded into SiOx matrix /A.S. Nikolenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 86-90. — Бібліогр.: 29 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT nikolenkoas laserheatingeffectonramanspectraofsinanocrystalsembeddedintosioxmatrix |
| first_indexed |
2023-10-18T20:30:20Z |
| last_indexed |
2023-10-18T20:30:20Z |
| _version_ |
1796150376240513024 |