ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure

ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure

ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compared with those obt...

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Бібліографічні деталі
Дата:2013
Автори: Semikina, T.V., Mamykin, S.V., Godlewski, M., Luka, G., Pietruszka, R., Kopalko, K., Krajewski, T.A., Gierałtowska, S., Wachnicki, L., Shmyryeva, L.N.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117676
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure / T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 111-116. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117676
record_format dspace
spelling irk-123456789-1176762017-05-27T03:04:24Z ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure Semikina, T.V. Mamykin, S.V. Godlewski, M. Luka, G. Pietruszka, R. Kopalko, K. Krajewski, T.A. Gierałtowska, S. Wachnicki, L. Shmyryeva, L.N. ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compared with those obtained for structures with Mo contact. The advantages of ZnO electrode are discussed. 2013 Article ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure / T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 111-116. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 77.55.hf; 88.40.jm, jn, jp http://dspace.nbuv.gov.ua/handle/123456789/117676 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compared with those obtained for structures with Mo contact. The advantages of ZnO electrode are discussed.
format Article
author Semikina, T.V.
Mamykin, S.V.
Godlewski, M.
Luka, G.
Pietruszka, R.
Kopalko, K.
Krajewski, T.A.
Gierałtowska, S.
Wachnicki, L.
Shmyryeva, L.N.
spellingShingle Semikina, T.V.
Mamykin, S.V.
Godlewski, M.
Luka, G.
Pietruszka, R.
Kopalko, K.
Krajewski, T.A.
Gierałtowska, S.
Wachnicki, L.
Shmyryeva, L.N.
ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Semikina, T.V.
Mamykin, S.V.
Godlewski, M.
Luka, G.
Pietruszka, R.
Kopalko, K.
Krajewski, T.A.
Gierałtowska, S.
Wachnicki, L.
Shmyryeva, L.N.
author_sort Semikina, T.V.
title ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
title_short ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
title_full ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
title_fullStr ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
title_full_unstemmed ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
title_sort zno as a conductive layer prepared by ald for solar cells based on n-cds/n-cdte/p-cu₁.₈s heterostructure
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2013
url http://dspace.nbuv.gov.ua/handle/123456789/117676
citation_txt ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure / T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 111-116. — Бібліогр.: 20 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:30:21Z
last_indexed 2023-10-18T20:30:21Z
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