2025-02-23T03:46:48-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-117687%22&qt=morelikethis&rows=5
2025-02-23T03:46:48-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-117687%22&qt=morelikethis&rows=5
2025-02-23T03:46:48-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T03:46:48-05:00 DEBUG: Deserialized SOLR response
Electron mobility in the GaAs/InGaAs/GaAs quantum wells

Electron mobility in the GaAs/InGaAs/GaAs quantum wells

The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two types of sample doping – in the quantum well and in the adjacent barrier at a small distance from the well – were used. In the case of...

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Bibliographic Details
Main Authors: Vainberg, V.V., Pylypchuk, A.S., Baidus, N.V., Zvonkov, B.N.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117687
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2025-02-23T03:46:48-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-117687%22&qt=morelikethis
2025-02-23T03:46:48-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-117687%22&qt=morelikethis
2025-02-23T03:46:48-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T03:46:48-05:00 DEBUG: Deserialized SOLR response

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