Low-temperature deposition of silicon dioxide films in high-density plasma

• Видавець: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
• Дата: 2013
• Автори: Yasunas, A., Kotov, D., Shiripov, V., Radzionay, U.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/117696
• Цитувати: Low-temperature deposition of silicon dioxide films in high-density plasma / A. Yasunas, D. Kotov, V. Shiripov, U. Radzionay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 216-219. — Бібліогр.: 2 назв. — англ.

One of the basic operations in the LED (light-emitting diode) chip fabrication technique is formation of dielectric coatings for the purpose of insulation and surface passivation of the LED structure. Oxides and nitrides of silicon obtained by physical or chemical vapor deposition techniques can act as such a coating. Low conformity of physical vapor deposition techniques limits the possibility of their application in a number of cases at LED mesostructures passivation. This work represents the results of experiments on silicon dioxide dielectric films deposition in the inductive coupled plasma under different operation conditions. The findings prove the possibility of lowtemperature deposition of thick silicon dioxide films with high conformality by the HDPCVD (high-density plasma chemical vapor deposition) technique.