Low-temperature deposition of silicon dioxide films in high-density plasma
One of the basic operations in the LED (light-emitting diode) chip fabrication technique is formation of dielectric coatings for the purpose of insulation and surface passivation of the LED structure. Oxides and nitrides of silicon obtained by physical or chemical vapor deposition techniques can...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2013 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117696 |
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| Цитувати: | Low-temperature deposition of silicon dioxide films in high-density plasma / A. Yasunas, D. Kotov, V. Shiripov, U. Radzionay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 216-219. — Бібліогр.: 2 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117696 |
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dspace |
| spelling |
irk-123456789-1176962017-05-27T03:03:07Z Low-temperature deposition of silicon dioxide films in high-density plasma Yasunas, A. Kotov, D. Shiripov, V. Radzionay, U. One of the basic operations in the LED (light-emitting diode) chip fabrication technique is formation of dielectric coatings for the purpose of insulation and surface passivation of the LED structure. Oxides and nitrides of silicon obtained by physical or chemical vapor deposition techniques can act as such a coating. Low conformity of physical vapor deposition techniques limits the possibility of their application in a number of cases at LED mesostructures passivation. This work represents the results of experiments on silicon dioxide dielectric films deposition in the inductive coupled plasma under different operation conditions. The findings prove the possibility of lowtemperature deposition of thick silicon dioxide films with high conformality by the HDPCVD (high-density plasma chemical vapor deposition) technique. 2013 Article Low-temperature deposition of silicon dioxide films in high-density plasma / A. Yasunas, D. Kotov, V. Shiripov, U. Radzionay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 216-219. — Бібліогр.: 2 назв. — англ. 1560-8034 PACS 78.20.-e, 82.33.Xj http://dspace.nbuv.gov.ua/handle/123456789/117696 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
One of the basic operations in the LED (light-emitting diode) chip fabrication
technique is formation of dielectric coatings for the purpose of insulation and surface
passivation of the LED structure. Oxides and nitrides of silicon obtained by physical or
chemical vapor deposition techniques can act as such a coating. Low conformity of
physical vapor deposition techniques limits the possibility of their application in a
number of cases at LED mesostructures passivation. This work represents the results of
experiments on silicon dioxide dielectric films deposition in the inductive coupled
plasma under different operation conditions. The findings prove the possibility of lowtemperature
deposition of thick silicon dioxide films with high conformality by the
HDPCVD (high-density plasma chemical vapor deposition) technique. |
| format |
Article |
| author |
Yasunas, A. Kotov, D. Shiripov, V. Radzionay, U. |
| spellingShingle |
Yasunas, A. Kotov, D. Shiripov, V. Radzionay, U. Low-temperature deposition of silicon dioxide films in high-density plasma Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Yasunas, A. Kotov, D. Shiripov, V. Radzionay, U. |
| author_sort |
Yasunas, A. |
| title |
Low-temperature deposition of silicon dioxide films in high-density plasma |
| title_short |
Low-temperature deposition of silicon dioxide films in high-density plasma |
| title_full |
Low-temperature deposition of silicon dioxide films in high-density plasma |
| title_fullStr |
Low-temperature deposition of silicon dioxide films in high-density plasma |
| title_full_unstemmed |
Low-temperature deposition of silicon dioxide films in high-density plasma |
| title_sort |
low-temperature deposition of silicon dioxide films in high-density plasma |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2013 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117696 |
| citation_txt |
Low-temperature deposition of silicon dioxide films
in high-density plasma / A. Yasunas, D. Kotov, V. Shiripov, U. Radzionay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 216-219. — Бібліогр.: 2 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT yasunasa lowtemperaturedepositionofsilicondioxidefilmsinhighdensityplasma AT kotovd lowtemperaturedepositionofsilicondioxidefilmsinhighdensityplasma AT shiripovv lowtemperaturedepositionofsilicondioxidefilmsinhighdensityplasma AT radzionayu lowtemperaturedepositionofsilicondioxidefilmsinhighdensityplasma |
| first_indexed |
2023-10-18T20:30:24Z |
| last_indexed |
2023-10-18T20:30:24Z |
| _version_ |
1796150382085275648 |