2025-02-23T11:32:57-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-117714%22&qt=morelikethis&rows=5
2025-02-23T11:32:57-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-117714%22&qt=morelikethis&rows=5
2025-02-23T11:32:57-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T11:32:57-05:00 DEBUG: Deserialized SOLR response
Influence of electron-electron drag on piezoresistance of n-Si
Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the effect of drag increases when the carrier concentration rises and temperature fal...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/117714 |
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