Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency
The mm-wave as well as noise properties of IMPATT diodes for the D-band are efficiently determined, with 4H-SiC and wurtzite type GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage (180 V) and efficiency (14.7%) is higher in case of 4...
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| Дата: | 2011 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117715 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency / P.R. Tripathy, M. Mukherjee, S.P. Pati // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 137-144. — Бібліогр.: 26 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1177152017-05-27T03:02:51Z Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency Tripathy, P.R. Mukherjee, M. Pati, S.P. The mm-wave as well as noise properties of IMPATT diodes for the D-band are efficiently determined, with 4H-SiC and wurtzite type GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage (180 V) and efficiency (14.7%) is higher in case of 4H-SiC as compared to wz GaN based diode having the breakdown voltage (153 V) and efficiency (13.7%). The study indicates that 4H-SiC IMPATT diode is capable of generating high RF power density of about 8.383×10¹⁰ W/m² as compared to GaN IMPATT diode that is capable to develop the power density 6.847×10¹⁰ W/m² for the same frequency of operation. It is also observed that wz-GaN exhibits better noise behavior 7.42×10⁻¹⁵ V²·s than SiC (5.16×10⁻¹⁵ V² ·s) for IMPATT operation at 140 GHz. A tradeoff between the power output and noise from the device reveals that wz-GaN would be a suitable base material for high power application of IMPATT diode with moderate noise. 2011 Article Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency / P.R. Tripathy, M. Mukherjee, S.P. Pati // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 137-144. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 73.50.Td, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/117715 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The mm-wave as well as noise properties of IMPATT diodes for the D-band are efficiently determined, with 4H-SiC and wurtzite type GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage (180 V) and efficiency (14.7%) is higher in case of 4H-SiC as compared to wz GaN based diode having the breakdown voltage (153 V) and efficiency (13.7%). The study indicates that 4H-SiC IMPATT diode is capable of generating high RF power density of about 8.383×10¹⁰ W/m² as compared to GaN IMPATT diode that is capable to develop the power density 6.847×10¹⁰ W/m² for the same frequency of operation. It is also observed that wz-GaN exhibits better noise behavior 7.42×10⁻¹⁵ V²·s than SiC (5.16×10⁻¹⁵ V² ·s) for IMPATT operation at 140 GHz. A tradeoff between the power output and noise from the device reveals that wz-GaN would be a suitable base material for high power application of IMPATT diode with moderate noise. |
| format |
Article |
| author |
Tripathy, P.R. Mukherjee, M. Pati, S.P. |
| spellingShingle |
Tripathy, P.R. Mukherjee, M. Pati, S.P. Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Tripathy, P.R. Mukherjee, M. Pati, S.P. |
| author_sort |
Tripathy, P.R. |
| title |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_short |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_full |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_fullStr |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_full_unstemmed |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_sort |
dynamic properties and avalanche noise analysis of 4h-sic over wz-gan based impatts at mm-wave window frequency |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117715 |
| citation_txt |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency / P.R. Tripathy, M. Mukherjee, S.P. Pati // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 137-144. — Бібліогр.: 26 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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2023-10-18T20:30:27Z |
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2023-10-18T20:30:27Z |
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