Electron-hole Fermi liquid in nanosized semiconductor structures
The experimental and theoretical results on the quantum-sized electron-hole liquid plasma (EHLP) in semiconductors and analysis of the difference of it in comparison to the bulk one have been presented. The non-equilibrium Fermi EHLP can be created in the bulk and layered structures (insulator-se...
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| Дата: | 2010 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117740 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electron-hole Fermi liquid in nanosized semiconductor structures / V.G. Litovchenko, A.A. Grygoriev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 51-57. — Бібліогр.: 22 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117740 |
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dspace |
| spelling |
irk-123456789-1177402017-05-27T03:05:12Z Electron-hole Fermi liquid in nanosized semiconductor structures Litovchenko, V.G. Grygoriev, A.A. The experimental and theoretical results on the quantum-sized electron-hole liquid plasma (EHLP) in semiconductors and analysis of the difference of it in comparison to the bulk one have been presented. The non-equilibrium Fermi EHLP can be created in the bulk and layered structures (insulator-semiconductor interfaces, thin films, quantum superlattices, etc.) at low temperatures and powerful laser radiation. In the quantum-sized structures, however, these phenomena appear at much higher temperatures, up to the room ones. The peculiarities of EHLP phenomena are: (1) appearance the very broad luminescence line in the low-energy side of its spectrum, which have constant width and energy position under variation of the light intensity as well as narrowing peak when increasing the temperature; (2) appearance of stimulated radiation with a relatively low excitation threshold (the so-called “surface laser effect”); (3) planar ballistic expansion of electron-hole plasma over long distances; (4) predicted effect of transformation of non-equilibrium 2D plasmons into radiative modes. 2010 Article Electron-hole Fermi liquid in nanosized semiconductor structures / V.G. Litovchenko, A.A. Grygoriev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 51-57. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 71.10.A, Ca; 71.35.Ee http://dspace.nbuv.gov.ua/handle/123456789/117740 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The experimental and theoretical results on the quantum-sized electron-hole
liquid plasma (EHLP) in semiconductors and analysis of the difference of it in
comparison to the bulk one have been presented. The non-equilibrium Fermi EHLP can
be created in the bulk and layered structures (insulator-semiconductor interfaces, thin
films, quantum superlattices, etc.) at low temperatures and powerful laser radiation. In
the quantum-sized structures, however, these phenomena appear at much higher
temperatures, up to the room ones. The peculiarities of EHLP phenomena are:
(1) appearance the very broad luminescence line in the low-energy side of its spectrum,
which have constant width and energy position under variation of the light intensity as
well as narrowing peak when increasing the temperature; (2) appearance of stimulated
radiation with a relatively low excitation threshold (the so-called “surface laser effect”);
(3) planar ballistic expansion of electron-hole plasma over long distances; (4) predicted
effect of transformation of non-equilibrium 2D plasmons into radiative modes. |
| format |
Article |
| author |
Litovchenko, V.G. Grygoriev, A.A. |
| spellingShingle |
Litovchenko, V.G. Grygoriev, A.A. Electron-hole Fermi liquid in nanosized semiconductor structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Litovchenko, V.G. Grygoriev, A.A. |
| author_sort |
Litovchenko, V.G. |
| title |
Electron-hole Fermi liquid in nanosized semiconductor structures |
| title_short |
Electron-hole Fermi liquid in nanosized semiconductor structures |
| title_full |
Electron-hole Fermi liquid in nanosized semiconductor structures |
| title_fullStr |
Electron-hole Fermi liquid in nanosized semiconductor structures |
| title_full_unstemmed |
Electron-hole Fermi liquid in nanosized semiconductor structures |
| title_sort |
electron-hole fermi liquid in nanosized semiconductor structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117740 |
| citation_txt |
Electron-hole Fermi liquid in nanosized semiconductor structures / V.G. Litovchenko, A.A. Grygoriev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 51-57. — Бібліогр.: 22 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT litovchenkovg electronholefermiliquidinnanosizedsemiconductorstructures AT grygorievaa electronholefermiliquidinnanosizedsemiconductorstructures |
| first_indexed |
2023-10-18T20:30:31Z |
| last_indexed |
2023-10-18T20:30:31Z |
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1796150384622829568 |