Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties
The results of structural investigations and electric field-induced properties of thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive evaporation technique are reported. The experimental investigations of microstructure and phase composition of thin films by transm...
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| Дата: | 2010 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117743 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties / V.I. Bilozertseva, H.M. Khlyap, P.S. Shkumbatyuk, N.L. Dyakonenko, A.O. Mamaluy, D.O. Gaman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 61-64. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117743 |
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dspace |
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irk-123456789-1177432017-05-27T03:04:57Z Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties Bilozertseva, V.I. Khlyap, H.M. Shkumbatyuk, P.S. Dyakonenko, N.L. Mamaluy, A.O. Gaman, D.O. The results of structural investigations and electric field-induced properties of thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive evaporation technique are reported. The experimental investigations of microstructure and phase composition of thin films by transmission electron microscopy (TEM) and electron diffraction methods are carried out. Тhe experimental current-voltage dependences and transport of charge carriers are discussed. 2010 Article Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties / V.I. Bilozertseva, H.M. Khlyap, P.S. Shkumbatyuk, N.L. Dyakonenko, A.O. Mamaluy, D.O. Gaman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 61-64. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 61.46.-w, 73.63.-b http://dspace.nbuv.gov.ua/handle/123456789/117743 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The results of structural investigations and electric field-induced properties of
thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive
evaporation technique are reported. The experimental investigations of microstructure
and phase composition of thin films by transmission electron microscopy (TEM) and
electron diffraction methods are carried out. Тhe experimental current-voltage
dependences and transport of charge carriers are discussed. |
| format |
Article |
| author |
Bilozertseva, V.I. Khlyap, H.M. Shkumbatyuk, P.S. Dyakonenko, N.L. Mamaluy, A.O. Gaman, D.O. |
| spellingShingle |
Bilozertseva, V.I. Khlyap, H.M. Shkumbatyuk, P.S. Dyakonenko, N.L. Mamaluy, A.O. Gaman, D.O. Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Bilozertseva, V.I. Khlyap, H.M. Shkumbatyuk, P.S. Dyakonenko, N.L. Mamaluy, A.O. Gaman, D.O. |
| author_sort |
Bilozertseva, V.I. |
| title |
Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties |
| title_short |
Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties |
| title_full |
Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties |
| title_fullStr |
Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties |
| title_full_unstemmed |
Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties |
| title_sort |
li-bi-se semiconductor thin films: technology, structure and electrophysical properties |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117743 |
| citation_txt |
Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties / V.I. Bilozertseva, H.M. Khlyap, P.S. Shkumbatyuk, N.L. Dyakonenko, A.O. Mamaluy, D.O. Gaman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 61-64. — Бібліогр.: 12 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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