Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals

Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals

Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for different values of fluence with using P+ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispers...

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Бібліографічні деталі
Дата:2011
Автори: Studenyak, I.P., Izai, V.Yu., Stephanovich, V.О., Panko, V.V., Kúš, P., Plecenik, A., Zahoran, M., Greguš, J., Roch, T.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117753
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / I.P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117753
record_format dspace
spelling irk-123456789-1177532017-05-27T03:05:02Z Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals Studenyak, I.P. Izai, V.Yu. Stephanovich, V.О. Panko, V.V. Kúš, P. Plecenik, A. Zahoran, M. Greguš, J. Roch, T. Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for different values of fluence with using P+ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77…320 K. The influence of ionic implantation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu₆PS₅X (X = I, Br) superionic conductors have been studied. 2011 Article Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / I.P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 77.80.Bh, 78.40.Ha http://dspace.nbuv.gov.ua/handle/123456789/117753 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for different values of fluence with using P+ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77…320 K. The influence of ionic implantation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu₆PS₅X (X = I, Br) superionic conductors have been studied.
format Article
author Studenyak, I.P.
Izai, V.Yu.
Stephanovich, V.О.
Panko, V.V.
Kúš, P.
Plecenik, A.
Zahoran, M.
Greguš, J.
Roch, T.
spellingShingle Studenyak, I.P.
Izai, V.Yu.
Stephanovich, V.О.
Panko, V.V.
Kúš, P.
Plecenik, A.
Zahoran, M.
Greguš, J.
Roch, T.
Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Studenyak, I.P.
Izai, V.Yu.
Stephanovich, V.О.
Panko, V.V.
Kúš, P.
Plecenik, A.
Zahoran, M.
Greguš, J.
Roch, T.
author_sort Studenyak, I.P.
title Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
title_short Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
title_full Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
title_fullStr Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
title_full_unstemmed Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
title_sort optical absorption edge and luminescence in phosphorous-implanted cu₆ps₅x (x = i, br) single crystals
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2011
url http://dspace.nbuv.gov.ua/handle/123456789/117753
citation_txt Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / I.P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:30:32Z
last_indexed 2023-10-18T20:30:32Z
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