Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure
Impurity states in Si/SiO₂ structure have been studied using cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO2 are sensitive to the action of magnetic field, which can be revealed due to changes in Si/SiO₂ optical properties. The most sensitive to magnetic...
Збережено в:
| Дата: | 2011 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117754 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure / L.P. Steblenko, O.V. Koplak, I.I. Syvorotka, V.S. Kravchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 334-338. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Impurity states in Si/SiO₂ structure have been studied using
cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO2
are sensitive to the action of magnetic field, which can be revealed due to changes in
Si/SiO₂ optical properties. The most sensitive to magnetic field (about 35 per cent) is the
intensity of the 1.9 eV CL band attributed to non-bridge oxygen atoms. |
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