Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure

• Дата: 2011
• Автори: Steblenko, L.P., Koplak, O.V., Syvorotka, I.I., Kravchenko, V.S.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/117754
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure / L.P. Steblenko, O.V. Koplak, I.I. Syvorotka, V.S. Kravchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 334-338. — Бібліогр.: 20 назв. — англ.

Impurity states in Si/SiO₂ structure have been studied using cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO2 are sensitive to the action of magnetic field, which can be revealed due to changes in Si/SiO₂ optical properties. The most sensitive to magnetic...