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Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism

Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism

The laser oscillation at room temperature in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with the impact excitation mechanism was first discovered after improvement of some waveguide optical properties. However, lasing turned out to be unstable and ceases soon, which is accom...

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Bibliographic Details
Main Authors: Vlasenko, N.A., Oleksenko, P.F., Mukhlyo, M.O., Lytvyn, P.M., Veligura, L.I., Denisova, Z.L.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117755
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Summary:The laser oscillation at room temperature in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with the impact excitation mechanism was first discovered after improvement of some waveguide optical properties. However, lasing turned out to be unstable and ceases soon, which is accompanied by strong weakening the emission recorded from the waveguide edge whereas the emission from the structure face remains intensive. It is shown that the above changes stem from increasing optical losses caused by appearance of light scattering in the structure by inhomogeneities formed during lasing as a consequence the most probably of recrystallization processes in the Cr:ZnS film. Some ways are proposed to improve the lasing stability

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