Formation of silicon nanoclusters in buried ultra-thin oxide layers

Formation of silicon nanoclusters in buried ultra-thin oxide layers

The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for carbon and oxygen ions were equal to 2 x 10¹⁶ cm⁻² and 1.8 x 10¹⁷ cm⁻², resp...

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Дата:2011
Автори: Oberemok, O.S., Litovchenko, V.G., Gamov, D.V., Popov, V.G., Melnik, V.P., Gudymenko, O.Yo., Nikirin, V.A., Khatsevich, І.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117760
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Formation of silicon nanoclusters in buried ultra-thin oxide layers / O.S. Oberemok, V.G. Litovchenko, D.V. Gamov, V.G. Popov, V.P. Melnik, O.Yo. Gudymenko, V.A. Nikirin, І.M. Khatsevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 269-272. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117760
record_format dspace
spelling irk-123456789-1177602017-05-27T03:03:58Z Formation of silicon nanoclusters in buried ultra-thin oxide layers Oberemok, O.S. Litovchenko, V.G. Gamov, D.V. Popov, V.G. Melnik, V.P. Gudymenko, O.Yo. Nikirin, V.A. Khatsevich, І.M. The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for carbon and oxygen ions were equal to 2 x 10¹⁶ cm⁻² and 1.8 x 10¹⁷ cm⁻², respectively. It has been observed that annealing at 1150 °C results in enhanced oxygen diffusion towards the region with a maximum carbon concentration. Analysis of X-ray diffraction patterns with a SIMS depth profiles inherent to annealed samples suggests formation of Si nanoclusters in the region with maximum concentrations of carbon and oxygen vacancies. The intensive luminescence has been observed with the maximum at 600 nm, which could be associated with silicon nano-inclusions in thin stoichiometric SiO₂ layer. 2011 Article Formation of silicon nanoclusters in buried ultra-thin oxide layers / O.S. Oberemok, V.G. Litovchenko, D.V. Gamov, V.G. Popov, V.P. Melnik, O.Yo. Gudymenko, V.A. Nikirin, І.M. Khatsevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 269-272. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 61.10.Nz, 61.72.Tt, 79.60.Jv, 78.55.-m http://dspace.nbuv.gov.ua/handle/123456789/117760 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for carbon and oxygen ions were equal to 2 x 10¹⁶ cm⁻² and 1.8 x 10¹⁷ cm⁻², respectively. It has been observed that annealing at 1150 °C results in enhanced oxygen diffusion towards the region with a maximum carbon concentration. Analysis of X-ray diffraction patterns with a SIMS depth profiles inherent to annealed samples suggests formation of Si nanoclusters in the region with maximum concentrations of carbon and oxygen vacancies. The intensive luminescence has been observed with the maximum at 600 nm, which could be associated with silicon nano-inclusions in thin stoichiometric SiO₂ layer.
format Article
author Oberemok, O.S.
Litovchenko, V.G.
Gamov, D.V.
Popov, V.G.
Melnik, V.P.
Gudymenko, O.Yo.
Nikirin, V.A.
Khatsevich, І.M.
spellingShingle Oberemok, O.S.
Litovchenko, V.G.
Gamov, D.V.
Popov, V.G.
Melnik, V.P.
Gudymenko, O.Yo.
Nikirin, V.A.
Khatsevich, І.M.
Formation of silicon nanoclusters in buried ultra-thin oxide layers
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Oberemok, O.S.
Litovchenko, V.G.
Gamov, D.V.
Popov, V.G.
Melnik, V.P.
Gudymenko, O.Yo.
Nikirin, V.A.
Khatsevich, І.M.
author_sort Oberemok, O.S.
title Formation of silicon nanoclusters in buried ultra-thin oxide layers
title_short Formation of silicon nanoclusters in buried ultra-thin oxide layers
title_full Formation of silicon nanoclusters in buried ultra-thin oxide layers
title_fullStr Formation of silicon nanoclusters in buried ultra-thin oxide layers
title_full_unstemmed Formation of silicon nanoclusters in buried ultra-thin oxide layers
title_sort formation of silicon nanoclusters in buried ultra-thin oxide layers
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2011
url http://dspace.nbuv.gov.ua/handle/123456789/117760
citation_txt Formation of silicon nanoclusters in buried ultra-thin oxide layers / O.S. Oberemok, V.G. Litovchenko, D.V. Gamov, V.G. Popov, V.P. Melnik, O.Yo. Gudymenko, V.A. Nikirin, І.M. Khatsevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 269-272. — Бібліогр.: 7 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:30:34Z
last_indexed 2023-10-18T20:30:34Z
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