Polarization analysis of birefringence in uniaxially deformed silicon crystals
The birefringence induced by uniaxial compression in low-doped silicon crystals was investigated both theoretically and experimentally. The circular components of the Stokes vector in the transmission and reflectance radiation are measured as a function of external pressure by using the method ba...
Збережено в:
| Дата: | 2007 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117773 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Polarization analysis of birefringence in uniaxially deformed silicon crystals / L.I. Berezhinsky, I.L. Berezhinsky, V.I. Pipa, I.Ye. Matyash, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 49-54. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117773 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1177732017-05-27T03:06:05Z Polarization analysis of birefringence in uniaxially deformed silicon crystals Berezhinsky, L.I. Berezhinsky, I.L. Pipa, V.I. Matyash, I.Ye. Serdega, B.K. The birefringence induced by uniaxial compression in low-doped silicon crystals was investigated both theoretically and experimentally. The circular components of the Stokes vector in the transmission and reflectance radiation are measured as a function of external pressure by using the method based on the modulation of radiation polarization. The value of the Brewster constant was obtained for absorption (λ = 0.63 µm) and transparence (λ = 1.15 µm) regions. The obtained experimental data are in a good agreement with calculation results based on the anisotropy model of dielectric properties within the framework of the Hook law. Shown is the practical importance of the polarization analysis in researching anisotropy of dielectric properties of materials. 2007 Article Polarization analysis of birefringence in uniaxially deformed silicon crystals / L.I. Berezhinsky, I.L. Berezhinsky, V.I. Pipa, I.Ye. Matyash, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 49-54. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 78.20.Fm http://dspace.nbuv.gov.ua/handle/123456789/117773 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The birefringence induced by uniaxial compression in low-doped silicon
crystals was investigated both theoretically and experimentally. The circular components
of the Stokes vector in the transmission and reflectance radiation are measured as a
function of external pressure by using the method based on the modulation of radiation
polarization. The value of the Brewster constant was obtained for absorption (λ =
0.63 µm) and transparence (λ = 1.15 µm) regions. The obtained experimental data are in
a good agreement with calculation results based on the anisotropy model of dielectric
properties within the framework of the Hook law. Shown is the practical importance of
the polarization analysis in researching anisotropy of dielectric properties of materials. |
| format |
Article |
| author |
Berezhinsky, L.I. Berezhinsky, I.L. Pipa, V.I. Matyash, I.Ye. Serdega, B.K. |
| spellingShingle |
Berezhinsky, L.I. Berezhinsky, I.L. Pipa, V.I. Matyash, I.Ye. Serdega, B.K. Polarization analysis of birefringence in uniaxially deformed silicon crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Berezhinsky, L.I. Berezhinsky, I.L. Pipa, V.I. Matyash, I.Ye. Serdega, B.K. |
| author_sort |
Berezhinsky, L.I. |
| title |
Polarization analysis of birefringence in uniaxially deformed silicon crystals |
| title_short |
Polarization analysis of birefringence in uniaxially deformed silicon crystals |
| title_full |
Polarization analysis of birefringence in uniaxially deformed silicon crystals |
| title_fullStr |
Polarization analysis of birefringence in uniaxially deformed silicon crystals |
| title_full_unstemmed |
Polarization analysis of birefringence in uniaxially deformed silicon crystals |
| title_sort |
polarization analysis of birefringence in uniaxially deformed silicon crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117773 |
| citation_txt |
Polarization analysis of birefringence in uniaxially deformed silicon crystals / L.I. Berezhinsky, I.L. Berezhinsky, V.I. Pipa, I.Ye. Matyash, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 49-54. — Бібліогр.: 12 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT berezhinskyli polarizationanalysisofbirefringenceinuniaxiallydeformedsiliconcrystals AT berezhinskyil polarizationanalysisofbirefringenceinuniaxiallydeformedsiliconcrystals AT pipavi polarizationanalysisofbirefringenceinuniaxiallydeformedsiliconcrystals AT matyashiye polarizationanalysisofbirefringenceinuniaxiallydeformedsiliconcrystals AT serdegabk polarizationanalysisofbirefringenceinuniaxiallydeformedsiliconcrystals |
| first_indexed |
2023-10-18T20:30:35Z |
| last_indexed |
2023-10-18T20:30:35Z |
| _version_ |
1796150388118781952 |