The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties

• Видавець: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
• Дата: 2007
• Автори: Horvat, G.T., Kondratenko, O.S., Loja, V.Ju., Myholynets, I.M., Rosola, I.J., Jurkovуch, N.V.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/117775
• Цитувати: The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties / G.T. Horvat, O.S. Kondratenko, V.Ju. Loja, I.M. Myholynets, I.J. Rosola, N.V. Jurkovуch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 45-48. — Бібліогр.: 6 назв. — англ.

The mechanisms of formation of modified thin-film structures based on GeSe(S) systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have been determined. The process of their growth and the structure is greatly influenced by the vapor composition, energetic state of its particles, the velocity of condensation, the temperature of the lining and that of evaporator. The 〈Ge₀.₄S₀.₆:Х〉 (Bi,Pb,In), 〈Ge₀.₄S₀.₆:In〉 structure is characterized by the mechanism of condensation which is realized according to the type: vapor-liquid-solid phase with coalescence. The condensation mechanism in 〈Ge₀.₄S₀.₆:Al(Te)〉 structures is realized according to the type vapor-solid phase. The roughness of modified Al (2 аt. %), Bi (14 аt. %), Pb (12 аt. %), In (1 аt. %, 5 аt. %) structures is 1…13 nm, and for 〈Ge₀.₄S₀.₆:Те〉 (Те is 30.7 аt. %) structure reaches ~37 nm. The thickness and optical parameters of modified thin-film structures have been determined using the method of multiangular ellipsometry.