The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties

The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties

The mechanisms of formation of modified thin-film structures based on GeSe(S) systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have been determined. The process of their growth and the structure is greatly influenced by the vapor composition, energetic state of its particl...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2007
Автори: Horvat, G.T., Kondratenko, O.S., Loja, V.Ju., Myholynets, I.M., Rosola, I.J., Jurkovуch, N.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117775
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties / G.T. Horvat, O.S. Kondratenko, V.Ju. Loja, I.M. Myholynets, I.J. Rosola, N.V. Jurkovуch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 45-48. — Бібліогр.: 6 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117775
record_format dspace
spelling irk-123456789-1177752017-05-27T03:03:25Z The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties Horvat, G.T. Kondratenko, O.S. Loja, V.Ju. Myholynets, I.M. Rosola, I.J. Jurkovуch, N.V. The mechanisms of formation of modified thin-film structures based on GeSe(S) systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have been determined. The process of their growth and the structure is greatly influenced by the vapor composition, energetic state of its particles, the velocity of condensation, the temperature of the lining and that of evaporator. The 〈Ge₀.₄S₀.₆:Х〉 (Bi,Pb,In), 〈Ge₀.₄S₀.₆:In〉 structure is characterized by the mechanism of condensation which is realized according to the type: vapor-liquid-solid phase with coalescence. The condensation mechanism in 〈Ge₀.₄S₀.₆:Al(Te)〉 structures is realized according to the type vapor-solid phase. The roughness of modified Al (2 аt. %), Bi (14 аt. %), Pb (12 аt. %), In (1 аt. %, 5 аt. %) structures is 1…13 nm, and for 〈Ge₀.₄S₀.₆:Те〉 (Те is 30.7 аt. %) structure reaches ~37 nm. The thickness and optical parameters of modified thin-film structures have been determined using the method of multiangular ellipsometry. 2007 Article The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties / G.T. Horvat, O.S. Kondratenko, V.Ju. Loja, I.M. Myholynets, I.J. Rosola, N.V. Jurkovуch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 45-48. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 78.66.-w http://dspace.nbuv.gov.ua/handle/123456789/117775 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The mechanisms of formation of modified thin-film structures based on GeSe(S) systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have been determined. The process of their growth and the structure is greatly influenced by the vapor composition, energetic state of its particles, the velocity of condensation, the temperature of the lining and that of evaporator. The 〈Ge₀.₄S₀.₆:Х〉 (Bi,Pb,In), 〈Ge₀.₄S₀.₆:In〉 structure is characterized by the mechanism of condensation which is realized according to the type: vapor-liquid-solid phase with coalescence. The condensation mechanism in 〈Ge₀.₄S₀.₆:Al(Te)〉 structures is realized according to the type vapor-solid phase. The roughness of modified Al (2 аt. %), Bi (14 аt. %), Pb (12 аt. %), In (1 аt. %, 5 аt. %) structures is 1…13 nm, and for 〈Ge₀.₄S₀.₆:Те〉 (Те is 30.7 аt. %) structure reaches ~37 nm. The thickness and optical parameters of modified thin-film structures have been determined using the method of multiangular ellipsometry.
format Article
author Horvat, G.T.
Kondratenko, O.S.
Loja, V.Ju.
Myholynets, I.M.
Rosola, I.J.
Jurkovуch, N.V.
spellingShingle Horvat, G.T.
Kondratenko, O.S.
Loja, V.Ju.
Myholynets, I.M.
Rosola, I.J.
Jurkovуch, N.V.
The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Horvat, G.T.
Kondratenko, O.S.
Loja, V.Ju.
Myholynets, I.M.
Rosola, I.J.
Jurkovуch, N.V.
author_sort Horvat, G.T.
title The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties
title_short The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties
title_full The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties
title_fullStr The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties
title_full_unstemmed The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties
title_sort formation mechanism of modified thin-film structures based on ge-se(s) systems and its influence on physical properties
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2007
url http://dspace.nbuv.gov.ua/handle/123456789/117775
citation_txt The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties / G.T. Horvat, O.S. Kondratenko, V.Ju. Loja, I.M. Myholynets, I.J. Rosola, N.V. Jurkovуch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 45-48. — Бібліогр.: 6 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT horvatgt theformationmechanismofmodifiedthinfilmstructuresbasedongesessystemsanditsinfluenceonphysicalproperties
AT kondratenkoos theformationmechanismofmodifiedthinfilmstructuresbasedongesessystemsanditsinfluenceonphysicalproperties
AT lojavju theformationmechanismofmodifiedthinfilmstructuresbasedongesessystemsanditsinfluenceonphysicalproperties
AT myholynetsim theformationmechanismofmodifiedthinfilmstructuresbasedongesessystemsanditsinfluenceonphysicalproperties
AT rosolaij theformationmechanismofmodifiedthinfilmstructuresbasedongesessystemsanditsinfluenceonphysicalproperties
AT jurkovuchnv theformationmechanismofmodifiedthinfilmstructuresbasedongesessystemsanditsinfluenceonphysicalproperties
AT horvatgt formationmechanismofmodifiedthinfilmstructuresbasedongesessystemsanditsinfluenceonphysicalproperties
AT kondratenkoos formationmechanismofmodifiedthinfilmstructuresbasedongesessystemsanditsinfluenceonphysicalproperties
AT lojavju formationmechanismofmodifiedthinfilmstructuresbasedongesessystemsanditsinfluenceonphysicalproperties
AT myholynetsim formationmechanismofmodifiedthinfilmstructuresbasedongesessystemsanditsinfluenceonphysicalproperties
AT rosolaij formationmechanismofmodifiedthinfilmstructuresbasedongesessystemsanditsinfluenceonphysicalproperties
AT jurkovuchnv formationmechanismofmodifiedthinfilmstructuresbasedongesessystemsanditsinfluenceonphysicalproperties
first_indexed 2023-10-18T20:30:36Z
last_indexed 2023-10-18T20:30:36Z
_version_ 1796150388329545728

Схожі ресурси