Graded refraction index antireflection coatings based on silicon and titanium oxides
Thin films with a graded refraction index constituted from silicon and titanium oxides were deposited by plasma enhanced chemical vapor deposition using electron cyclotron resonance. A plasma of oxygen reacted with two precursors: the tetraethoxysilane (TEOS) and the titanium isopropoxide (TIPT)....
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| Дата: | 2007 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117776 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Graded refraction index antireflection coatings based on silicon and titanium oxides / Abdelhakim Mahdjoub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 60-66. — Бібліогр.: 31 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117776 |
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dspace |
| spelling |
irk-123456789-1177762017-05-27T03:05:29Z Graded refraction index antireflection coatings based on silicon and titanium oxides Abdelhakim Mahdjoub Thin films with a graded refraction index constituted from silicon and titanium oxides were deposited by plasma enhanced chemical vapor deposition using electron cyclotron resonance. A plasma of oxygen reacted with two precursors: the tetraethoxysilane (TEOS) and the titanium isopropoxide (TIPT). The automatic regulation of the precursor flows makes it possible to modify the chemical composition, and consequently the optical index, through the deposited films. To control the thickness, the refraction index and the growth kinetics, in situ spectroscopic ellipsometer was adapted to the reactor. The analysis of ex situ ellipsometric spectra measured at the end of each deposition allow to determine a refraction index profile and optical properties of the inhomogeneous deposited films. Measurements of reflectivity carried out in the ultraviolet-visible-near infrared range show that these films could be used as antireflective coatings for silicon solar cells: 3.7 % weighted average reflectivity between 300 and 1100 nm and 48 % improvement of the photo-generated current were obtained. 2007 Article Graded refraction index antireflection coatings based on silicon and titanium oxides / Abdelhakim Mahdjoub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 60-66. — Бібліогр.: 31 назв. — англ. 1560-8034 PACS 42.79.Wc, 81.15.-z http://dspace.nbuv.gov.ua/handle/123456789/117776 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Thin films with a graded refraction index constituted from silicon and titanium
oxides were deposited by plasma enhanced chemical vapor deposition using electron
cyclotron resonance. A plasma of oxygen reacted with two precursors: the
tetraethoxysilane (TEOS) and the titanium isopropoxide (TIPT). The automatic
regulation of the precursor flows makes it possible to modify the chemical composition,
and consequently the optical index, through the deposited films. To control the thickness,
the refraction index and the growth kinetics, in situ spectroscopic ellipsometer was
adapted to the reactor. The analysis of ex situ ellipsometric spectra measured at the end
of each deposition allow to determine a refraction index profile and optical properties of
the inhomogeneous deposited films. Measurements of reflectivity carried out in the
ultraviolet-visible-near infrared range show that these films could be used as
antireflective coatings for silicon solar cells: 3.7 % weighted average reflectivity between
300 and 1100 nm and 48 % improvement of the photo-generated current were obtained. |
| format |
Article |
| author |
Abdelhakim Mahdjoub |
| spellingShingle |
Abdelhakim Mahdjoub Graded refraction index antireflection coatings based on silicon and titanium oxides Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Abdelhakim Mahdjoub |
| author_sort |
Abdelhakim Mahdjoub |
| title |
Graded refraction index antireflection coatings based on silicon and titanium oxides |
| title_short |
Graded refraction index antireflection coatings based on silicon and titanium oxides |
| title_full |
Graded refraction index antireflection coatings based on silicon and titanium oxides |
| title_fullStr |
Graded refraction index antireflection coatings based on silicon and titanium oxides |
| title_full_unstemmed |
Graded refraction index antireflection coatings based on silicon and titanium oxides |
| title_sort |
graded refraction index antireflection coatings based on silicon and titanium oxides |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117776 |
| citation_txt |
Graded refraction index antireflection coatings based on silicon and titanium oxides / Abdelhakim Mahdjoub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 60-66. — Бібліогр.: 31 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT abdelhakimmahdjoub gradedrefractionindexantireflectioncoatingsbasedonsiliconandtitaniumoxides |
| first_indexed |
2023-10-18T20:30:36Z |
| last_indexed |
2023-10-18T20:30:36Z |
| _version_ |
1796150388435451904 |