Development and investigation of microwave radiation sources and detector sections using SBDs within the 220–400 GHz frequency range
A procedure of mm- and submm-wave devices simulation based on the up-todate simulation techniques for bulk microwave structures is proposed. We demonstrate a possibility of making microwave radiation sources based on IMPATT diodes and frequency multipliers with frequency output of 280 GHz as well...
Збережено в:
| Дата: | 2011 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117787 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Development and investigation of microwave radiation sources and detector sections using SBDs within the 220–400 GHz frequency range / A.V. Zorenko, Ya.Ya. Kudryk, Yu.V. Marunenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 411-415. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | A procedure of mm- and submm-wave devices simulation based on the up-todate
simulation techniques for bulk microwave structures is proposed. We demonstrate a
possibility of making microwave radiation sources based on IMPATT diodes and
frequency multipliers with frequency output of 280 GHz as well as detector sections with
Schottky barrier diodes for the 220–325 GHz and 325–400 GHz frequency ranges. |
|---|