Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field

Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field

In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe that appears from centers with the g-factor g ~ 2.0010...

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Дата:2010
Автори: Trachevsky, V.V., Steblenko, L.P., Demchenko, P.Y., Koplak, O.V., Kuryliuk, A.M., Melnik, A.K.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117805
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117805
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spelling irk-123456789-1178052017-05-27T03:05:53Z Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field Trachevsky, V.V. Steblenko, L.P. Demchenko, P.Y. Koplak, O.V. Kuryliuk, A.M. Melnik, A.K. In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe that appears from centers with the g-factor g ~ 2.0010 (Pв – centers). Intensity of the determined spectral line decreases twice after magnetic processing. The observed redox processes and evolution of defect structure are interpreted as the influence of magnetic field on micro-structured Si. Calculations made using the data of X-ray diffractometric researches showed an essential decrease of internal strains and respective increase of the lattice parameter in micro-structured Si samples after magnetic processing in the weak magnetic field. 2010 Article Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ. PACS 61.43.Dq, 61.72.Dd, 68.35.Dv, 76.30.Mi 1560-8034 http://dspace.nbuv.gov.ua/handle/123456789/117805 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe that appears from centers with the g-factor g ~ 2.0010 (Pв – centers). Intensity of the determined spectral line decreases twice after magnetic processing. The observed redox processes and evolution of defect structure are interpreted as the influence of magnetic field on micro-structured Si. Calculations made using the data of X-ray diffractometric researches showed an essential decrease of internal strains and respective increase of the lattice parameter in micro-structured Si samples after magnetic processing in the weak magnetic field.
format Article
author Trachevsky, V.V.
Steblenko, L.P.
Demchenko, P.Y.
Koplak, O.V.
Kuryliuk, A.M.
Melnik, A.K.
spellingShingle Trachevsky, V.V.
Steblenko, L.P.
Demchenko, P.Y.
Koplak, O.V.
Kuryliuk, A.M.
Melnik, A.K.
Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Trachevsky, V.V.
Steblenko, L.P.
Demchenko, P.Y.
Koplak, O.V.
Kuryliuk, A.M.
Melnik, A.K.
author_sort Trachevsky, V.V.
title Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
title_short Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
title_full Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
title_fullStr Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
title_full_unstemmed Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
title_sort changes in the state of paramagnetic centers and lattice parameter of micro-structured si under the influence of weak magnetic field
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2010
url http://dspace.nbuv.gov.ua/handle/123456789/117805
citation_txt Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT steblenkolp changesinthestateofparamagneticcentersandlatticeparameterofmicrostructuredsiundertheinfluenceofweakmagneticfield
AT demchenkopy changesinthestateofparamagneticcentersandlatticeparameterofmicrostructuredsiundertheinfluenceofweakmagneticfield
AT koplakov changesinthestateofparamagneticcentersandlatticeparameterofmicrostructuredsiundertheinfluenceofweakmagneticfield
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AT melnikak changesinthestateofparamagneticcentersandlatticeparameterofmicrostructuredsiundertheinfluenceofweakmagneticfield
first_indexed 2023-10-18T20:30:40Z
last_indexed 2023-10-18T20:30:40Z
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