Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell

A photovoltaic cell, based on copper and indium selenide (CuInSe₂) thin layers, with a good efficiency can be achieved by simple, easy to implement and low cost techniques. The high refractive index materials used as absorbers in photovoltaic cells cause high reflection losses (about 30%). Thin C...

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Видавець:Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Дата:2013
Автори: Abdelhakim Mahdjoub, Lazhar Hadjeris
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117813
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Цитувати:Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell / Abdelhakim Mahdjoub, Lazhar Hadjeris // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 379-381. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117813
record_format dspace
spelling irk-123456789-1178132017-05-27T03:04:44Z Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell Abdelhakim Mahdjoub Lazhar Hadjeris A photovoltaic cell, based on copper and indium selenide (CuInSe₂) thin layers, with a good efficiency can be achieved by simple, easy to implement and low cost techniques. The high refractive index materials used as absorbers in photovoltaic cells cause high reflection losses (about 30%). Thin CdS and ZnO films that are, respectively, the buffer layer and the window of the cell have lower indices and are naturally suited to antireflective applications. Also, a suitable choice of the film thickness leads to minimization of reflection losses, resulting in a significant improvement of the photovoltaic efficiency. The aim of this work is to provide easy solutions that reduce reflection losses to less than 4% while respecting technological constraints. 2013 Article Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell / Abdelhakim Mahdjoub, Lazhar Hadjeris // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 379-381. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 84.60.Jt, 86.40.jn http://dspace.nbuv.gov.ua/handle/123456789/117813 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A photovoltaic cell, based on copper and indium selenide (CuInSe₂) thin layers, with a good efficiency can be achieved by simple, easy to implement and low cost techniques. The high refractive index materials used as absorbers in photovoltaic cells cause high reflection losses (about 30%). Thin CdS and ZnO films that are, respectively, the buffer layer and the window of the cell have lower indices and are naturally suited to antireflective applications. Also, a suitable choice of the film thickness leads to minimization of reflection losses, resulting in a significant improvement of the photovoltaic efficiency. The aim of this work is to provide easy solutions that reduce reflection losses to less than 4% while respecting technological constraints.
format Article
author Abdelhakim Mahdjoub
Lazhar Hadjeris
spellingShingle Abdelhakim Mahdjoub
Lazhar Hadjeris
Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Abdelhakim Mahdjoub
Lazhar Hadjeris
author_sort Abdelhakim Mahdjoub
title Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell
title_short Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell
title_full Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell
title_fullStr Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell
title_full_unstemmed Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell
title_sort reflection loss minimization for a zno/cds/cuinse₂ photovoltaic cell
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2013
url http://dspace.nbuv.gov.ua/handle/123456789/117813
citation_txt Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell / Abdelhakim Mahdjoub, Lazhar Hadjeris // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 379-381. — Бібліогр.: 8 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT abdelhakimmahdjoub reflectionlossminimizationforaznocdscuinse2photovoltaiccell
AT lazharhadjeris reflectionlossminimizationforaznocdscuinse2photovoltaiccell
first_indexed 2023-10-18T20:30:41Z
last_indexed 2023-10-18T20:30:41Z
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