Saturation of optical absorption in CdS single crystals

The absorption saturation of CdS single crystals was investigated in the Urbach region. It was shown that the threshold behaviour of the absorption coefficient is caused by recharging of the shallow acceptors, and the absorption edge has exponential character both at low and high pumping intensities...

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Бібліографічні деталі
Дата:1999
Автори: Malysh, N. I., Kunets, V. P., Valiukh, S. I., Kunets, Vas. P.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117859
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Saturation of optical absorption in CdS single crystals / N. I. Malysh, V. P. Kunets, S. I. Valiukh, Vas. P. Kunets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 31-34. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Резюме:The absorption saturation of CdS single crystals was investigated in the Urbach region. It was shown that the threshold behaviour of the absorption coefficient is caused by recharging of the shallow acceptors, and the absorption edge has exponential character both at low and high pumping intensities. The calculation method of nonlinear transmission dependencies was proposed. Using the known formulae one can minimize the value of root mean square deviation of the measured data from the calculated ones in the whole region of the light intensities.