Photoluminescence excitation spectroscopy in narrow - gap Hg₁₋x₋yCd xMnyTe
New results on infrared photoluminescence and photoluminescence excitation spectroscopy around the fundamental energy gap in Hg₁₋x₋yCdxMnyTe single crystal are presented. A very strong electron-phonon coupling influencing the optical spectra of this narrow-gap semiconductor is found. An indirect «ho...
Збережено в:
| Дата: | 1999 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117860 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoluminescence excitation spectroscopy in narrow - gap Hg₁₋x₋yCd xMnyTe / Yu. I. Mazur // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 35-41. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | New results on infrared photoluminescence and photoluminescence excitation spectroscopy around the fundamental energy gap in Hg₁₋x₋yCdxMnyTe single crystal are presented. A very strong electron-phonon coupling influencing the optical spectra of this narrow-gap semiconductor is found. An indirect «hot exciton» absorption under participation of longitudinal optical phonons occurs to be the main absorption mechanism. It was shown, that knowledge about the excitonic processes in wide gap semiconductors also can be applied to high-quality narrow-gap materials. |
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