Investigation of electron-phonon interaction in bulk and nanostructured semiconductors

In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be successfully applied to bulk and nanosized semiconductors. The idea of the approach...

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Бібліографічні деталі
Дата:2007
Автори: Yaremko, A.M., Yukhymchuk, V.O., Dzhagan, V.M., Valakh, M.Ya., Azhniuk, Yu.M., Baran, J., Ratajczak, H., Drozd, M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117861
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Investigation of electron-phonon interaction in bulk and nanostructured semiconductors / A.M. Yaremko, V.O. Yukhymchuk, V.M. Dzhagan, M.Ya. Valakh, Yu.M. Azhniuk, J. Baran, H. Ratajczak, M. Drozd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 1-5. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117861
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spelling irk-123456789-1178612017-05-28T03:02:25Z Investigation of electron-phonon interaction in bulk and nanostructured semiconductors Yaremko, A.M. Yukhymchuk, V.O. Dzhagan, V.M. Valakh, M.Ya. Azhniuk, Yu.M. Baran, J. Ratajczak, H. Drozd, M. In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be successfully applied to bulk and nanosized semiconductors. The idea of the approach proposed here is to describe the experimental Raman (or absorption) spectra containing the phonon replicas theoretically by varying the EPI constant. The main parameter of the theoretical expression describing the experimental spectrum is the ratio of EPI constant to the frequency of the corresponding phonon mode. Based on the experimental and theoretical results, we have found that decreasing the size of CdSxSe₁₋x QDs embedded in borosilicate glass matrix results in some enhancement of electron-phonon interaction. 2007 Article Investigation of electron-phonon interaction in bulk and nanostructured semiconductors / A.M. Yaremko, V.O. Yukhymchuk, V.M. Dzhagan, M.Ya. Valakh, Yu.M. Azhniuk, J. Baran, H. Ratajczak, M. Drozd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 1-5. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 63.20.Dj, 73.40.Lq http://dspace.nbuv.gov.ua/handle/123456789/117861 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be successfully applied to bulk and nanosized semiconductors. The idea of the approach proposed here is to describe the experimental Raman (or absorption) spectra containing the phonon replicas theoretically by varying the EPI constant. The main parameter of the theoretical expression describing the experimental spectrum is the ratio of EPI constant to the frequency of the corresponding phonon mode. Based on the experimental and theoretical results, we have found that decreasing the size of CdSxSe₁₋x QDs embedded in borosilicate glass matrix results in some enhancement of electron-phonon interaction.
format Article
author Yaremko, A.M.
Yukhymchuk, V.O.
Dzhagan, V.M.
Valakh, M.Ya.
Azhniuk, Yu.M.
Baran, J.
Ratajczak, H.
Drozd, M.
spellingShingle Yaremko, A.M.
Yukhymchuk, V.O.
Dzhagan, V.M.
Valakh, M.Ya.
Azhniuk, Yu.M.
Baran, J.
Ratajczak, H.
Drozd, M.
Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Yaremko, A.M.
Yukhymchuk, V.O.
Dzhagan, V.M.
Valakh, M.Ya.
Azhniuk, Yu.M.
Baran, J.
Ratajczak, H.
Drozd, M.
author_sort Yaremko, A.M.
title Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_short Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_full Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_fullStr Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_full_unstemmed Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
title_sort investigation of electron-phonon interaction in bulk and nanostructured semiconductors
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2007
url http://dspace.nbuv.gov.ua/handle/123456789/117861
citation_txt Investigation of electron-phonon interaction in bulk and nanostructured semiconductors / A.M. Yaremko, V.O. Yukhymchuk, V.M. Dzhagan, M.Ya. Valakh, Yu.M. Azhniuk, J. Baran, H. Ratajczak, M. Drozd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 1-5. — Бібліогр.: 13 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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last_indexed 2023-10-18T20:30:51Z
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