High-temperature configurations of dimers in Si (001) surface layers
Molecular Dynamics (MD) simulation of Si (001) surface layers was performed. In the modified algorithm of MD the potential is corrected on each step of calculation. The corrections account the re-hybridization of chemical bonds in relaxation processes. It was found that the high-temperature relaxati...
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| Дата: | 2003 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117867 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | High-temperature configurations of dimers in Si (001) surface layers / A.E. Kiv, T.I. Maksymova, N.V. Moiseenko, V.N. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 14-18. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117867 |
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dspace |
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irk-123456789-1178672017-05-28T03:02:36Z High-temperature configurations of dimers in Si (001) surface layers Kiv, A.E. Maksymova, T.I. Moiseenko, N.V. Soloviev, V.N. Molecular Dynamics (MD) simulation of Si (001) surface layers was performed. In the modified algorithm of MD the potential is corrected on each step of calculation. The corrections account the re-hybridization of chemical bonds in relaxation processes. It was found that the high-temperature relaxation of Si surface layers leads to formation of Quasi-Disordered Phase (QDP). QDP is spread from the first layer up to the forth-fifth layer. In all these layers dimers are formed. Their characteristics (length distribution and space orientation) change from layer to layer. They differ significantly from dimers formed at lower temperatures. 2003 Article High-temperature configurations of dimers in Si (001) surface layers / A.E. Kiv, T.I. Maksymova, N.V. Moiseenko, V.N. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 14-18. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 68.35.Bs PACS: 71.15.Pd http://dspace.nbuv.gov.ua/handle/123456789/117867 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Molecular Dynamics (MD) simulation of Si (001) surface layers was performed. In the modified algorithm of MD the potential is corrected on each step of calculation. The corrections account the re-hybridization of chemical bonds in relaxation processes. It was found that the high-temperature relaxation of Si surface layers leads to formation of Quasi-Disordered Phase (QDP). QDP is spread from the first layer up to the forth-fifth layer. In all these layers dimers are formed. Their characteristics (length distribution and space orientation) change from layer to layer. They differ significantly from dimers formed at lower temperatures. |
| format |
Article |
| author |
Kiv, A.E. Maksymova, T.I. Moiseenko, N.V. Soloviev, V.N. |
| spellingShingle |
Kiv, A.E. Maksymova, T.I. Moiseenko, N.V. Soloviev, V.N. High-temperature configurations of dimers in Si (001) surface layers Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kiv, A.E. Maksymova, T.I. Moiseenko, N.V. Soloviev, V.N. |
| author_sort |
Kiv, A.E. |
| title |
High-temperature configurations of dimers in Si (001) surface layers |
| title_short |
High-temperature configurations of dimers in Si (001) surface layers |
| title_full |
High-temperature configurations of dimers in Si (001) surface layers |
| title_fullStr |
High-temperature configurations of dimers in Si (001) surface layers |
| title_full_unstemmed |
High-temperature configurations of dimers in Si (001) surface layers |
| title_sort |
high-temperature configurations of dimers in si (001) surface layers |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117867 |
| citation_txt |
High-temperature configurations of dimers in Si (001) surface layers / A.E. Kiv, T.I. Maksymova, N.V. Moiseenko, V.N. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 14-18. — Бібліогр.: 13 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT kivae hightemperatureconfigurationsofdimersinsi001surfacelayers AT maksymovati hightemperatureconfigurationsofdimersinsi001surfacelayers AT moiseenkonv hightemperatureconfigurationsofdimersinsi001surfacelayers AT solovievvn hightemperatureconfigurationsofdimersinsi001surfacelayers |
| first_indexed |
2023-10-18T20:30:51Z |
| last_indexed |
2023-10-18T20:30:51Z |
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1796150395733540864 |