Electronic structure and bulk properties of MB₆ and MB₁₂ borides

Ab initio band structure calculations have been carried out for higher boridesMB6 andMB12. High precision measurements of the elastic constants were performed for ZrB₁₂, HoB₁₂, ErB₁₂, TmB₁₂, LuB₁₂, YB₆ and LaB₆ compounds at low temperatures. The bulk properties of the borides have been analyzed on...

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Дата:2008
Автори: Grechnev, G.E., Baranovskiy, A.E., Fil, V.D., Ignatova, T.V., Kolobov, I.G., Logosha, A.V., Shitsevalova, N.Yu., Filippov, V.B., Eriksson, O.
Формат: Стаття
Мова:English
Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2008
Назва видання:Физика низких температур
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Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117879
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Electronic structure and bulk properties of MB₆ and MB₁₂ borides / G.E. Grechnev, A.E. Baranovskiy, V.D. Fil, T.V. Ignatova, I.G. Kolobov, A.V. Logosha,N.Yu. Shitsevalova, V.B. Filippov, O. Eriksson // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1167-1176. — Бібліогр.: 46 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117879
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spelling irk-123456789-1178792017-05-28T03:02:46Z Electronic structure and bulk properties of MB₆ and MB₁₂ borides Grechnev, G.E. Baranovskiy, A.E. Fil, V.D. Ignatova, T.V. Kolobov, I.G. Logosha, A.V. Shitsevalova, N.Yu. Filippov, V.B. Eriksson, O. Электpонные свойства металлов и сплавов Ab initio band structure calculations have been carried out for higher boridesMB6 andMB12. High precision measurements of the elastic constants were performed for ZrB₁₂, HoB₁₂, ErB₁₂, TmB₁₂, LuB₁₂, YB₆ and LaB₆ compounds at low temperatures. The bulk properties of the borides have been analyzed on the basis of the calculated equations of states and balanced crystal orbital overlap populations. Our calculations indicate that hexaborides with divalent metals, CaB₆, SrB₆, BaB₆, and YbB₆, are semiconductors with small energy gaps. The metallic MB6 hexaborides with trivalent M atoms are found to possess larger bulk moduli values. For dodecaborides bulk moduli are found to be higher for MB₁₂ with increased filling of the conduction band (ZrB₁₂, HfB₁₂, UB₁₂), comparatively to M³+B₁₂ compounds. The total energy calculations for different magnetic configurations in YbB₁₂ point to a possibility of antiferromagnetic coupling between Yb³⁺ ions. 2008 Article Electronic structure and bulk properties of MB₆ and MB₁₂ borides / G.E. Grechnev, A.E. Baranovskiy, V.D. Fil, T.V. Ignatova, I.G. Kolobov, A.V. Logosha,N.Yu. Shitsevalova, V.B. Filippov, O. Eriksson // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1167-1176. — Бібліогр.: 46 назв. — англ. 0132-6414 PACS: 62.20.D–;71.15.Nc;71.20.Lp http://dspace.nbuv.gov.ua/handle/123456789/117879 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Электpонные свойства металлов и сплавов
Электpонные свойства металлов и сплавов
spellingShingle Электpонные свойства металлов и сплавов
Электpонные свойства металлов и сплавов
Grechnev, G.E.
Baranovskiy, A.E.
Fil, V.D.
Ignatova, T.V.
Kolobov, I.G.
Logosha, A.V.
Shitsevalova, N.Yu.
Filippov, V.B.
Eriksson, O.
Electronic structure and bulk properties of MB₆ and MB₁₂ borides
Физика низких температур
description Ab initio band structure calculations have been carried out for higher boridesMB6 andMB12. High precision measurements of the elastic constants were performed for ZrB₁₂, HoB₁₂, ErB₁₂, TmB₁₂, LuB₁₂, YB₆ and LaB₆ compounds at low temperatures. The bulk properties of the borides have been analyzed on the basis of the calculated equations of states and balanced crystal orbital overlap populations. Our calculations indicate that hexaborides with divalent metals, CaB₆, SrB₆, BaB₆, and YbB₆, are semiconductors with small energy gaps. The metallic MB6 hexaborides with trivalent M atoms are found to possess larger bulk moduli values. For dodecaborides bulk moduli are found to be higher for MB₁₂ with increased filling of the conduction band (ZrB₁₂, HfB₁₂, UB₁₂), comparatively to M³+B₁₂ compounds. The total energy calculations for different magnetic configurations in YbB₁₂ point to a possibility of antiferromagnetic coupling between Yb³⁺ ions.
format Article
author Grechnev, G.E.
Baranovskiy, A.E.
Fil, V.D.
Ignatova, T.V.
Kolobov, I.G.
Logosha, A.V.
Shitsevalova, N.Yu.
Filippov, V.B.
Eriksson, O.
author_facet Grechnev, G.E.
Baranovskiy, A.E.
Fil, V.D.
Ignatova, T.V.
Kolobov, I.G.
Logosha, A.V.
Shitsevalova, N.Yu.
Filippov, V.B.
Eriksson, O.
author_sort Grechnev, G.E.
title Electronic structure and bulk properties of MB₆ and MB₁₂ borides
title_short Electronic structure and bulk properties of MB₆ and MB₁₂ borides
title_full Electronic structure and bulk properties of MB₆ and MB₁₂ borides
title_fullStr Electronic structure and bulk properties of MB₆ and MB₁₂ borides
title_full_unstemmed Electronic structure and bulk properties of MB₆ and MB₁₂ borides
title_sort electronic structure and bulk properties of mb₆ and mb₁₂ borides
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
publishDate 2008
topic_facet Электpонные свойства металлов и сплавов
url http://dspace.nbuv.gov.ua/handle/123456789/117879
citation_txt Electronic structure and bulk properties of MB₆ and MB₁₂ borides / G.E. Grechnev, A.E. Baranovskiy, V.D. Fil, T.V. Ignatova, I.G. Kolobov, A.V. Logosha,N.Yu. Shitsevalova, V.B. Filippov, O. Eriksson // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1167-1176. — Бібліогр.: 46 назв. — англ.
series Физика низких температур
work_keys_str_mv AT grechnevge electronicstructureandbulkpropertiesofmb6andmb12borides
AT baranovskiyae electronicstructureandbulkpropertiesofmb6andmb12borides
AT filvd electronicstructureandbulkpropertiesofmb6andmb12borides
AT ignatovatv electronicstructureandbulkpropertiesofmb6andmb12borides
AT kolobovig electronicstructureandbulkpropertiesofmb6andmb12borides
AT logoshaav electronicstructureandbulkpropertiesofmb6andmb12borides
AT shitsevalovanyu electronicstructureandbulkpropertiesofmb6andmb12borides
AT filippovvb electronicstructureandbulkpropertiesofmb6andmb12borides
AT erikssono electronicstructureandbulkpropertiesofmb6andmb12borides
first_indexed 2023-10-18T20:30:46Z
last_indexed 2023-10-18T20:30:46Z
_version_ 1796150397021192192