Frequency-dependent dielectric coefficients of TlInS₂ amorphous films
The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac) of amorphous films prepared by evaporation of TlInS₂ has been investigated at frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > 10⁶ Hz, relaxation losses take place. It is established that the hopping...
Збережено в:
| Дата: | 2007 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117916 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Frequency-dependent dielectric coefficients of TlInS₂ amorphous films / S.N. Mustafaeva, M.M. Asadov, K.Sh. Qahramanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 58-61. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac)
of amorphous films prepared by evaporation of TlInS₂ has been investigated at
frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > 10⁶ Hz, relaxation losses take
place. It is established that the hopping conduction near the Fermi level occurs in TlInS₂
amorphous films at frequencies up to 3⋅10⁶ Hz. The density of localized states at the
Fermi level, the mean time for phonon-assisted tunneling, and the hopping distance have been evaluated for polymorphic TlInS₂ films. For frequencies above 10⁷ Hz, σac( f ) ~ f₂.
Such a behavior is caused by optical transitions in TlInS₂ amorphous films. |
|---|