Organic iso-type pentacene – lead phthalocyanine heterostructures

The photovoltaic properties of organic iso-type heterostructures based on pentacene (Pn) and lead phthalocyanine (PbPc) prepared by thermal deposition at different substrate temperatures (Ts) are investigated. It is shown that, at modulated illumination for Pn/PbPc heterostructures prepared at Тs...

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Бібліографічні деталі
Дата:2007
Автори: Vertsimakha, Ya.I., Lutsyk, P.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117920
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Organic iso-type pentacene – lead phthalocyanine heterostructures / Ya.I. Vertsimakha, P.M. Lutsyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 81-85. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Резюме:The photovoltaic properties of organic iso-type heterostructures based on pentacene (Pn) and lead phthalocyanine (PbPc) prepared by thermal deposition at different substrate temperatures (Ts) are investigated. It is shown that, at modulated illumination for Pn/PbPc heterostructures prepared at Тs = 300 K, the reversal of a sign is observed in photovoltage spectra. The properties of the structures are well described by the Van Opdorp model that indicates the presence of the high surface recombination rate of charge carriers at the interface of heterostructure components. At this, the contribution of heterostructure components to the photovoltage formation can be changed with unmodulated monochromatic additional illumination. In Pn/PbPc heterostructures prepared at Ts = 370 K, there is no reversal of the photovoltage sign, and the photovoltage is significantly (up to twice) higher in comparison with both heterostructures obtained at Ts = 300 K and separate layers of components (Pn and PbPc). This is the evidence for the low recombination rate of charge carriers at the interface of Pn/PbPc heterostructures prepared at Ts = 370 K