Dissolution of indium arsenide in nitric solutions of the hydrobromic acid
Dissolution of InAs in HNO₃-HBr-H₂O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO₃]/[HBr] ratio, InAs dissolution may be limited by kinetic, or diffusion, or combined mechanisms. The d...
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| Дата: | 1999 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117925 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dissolution of indium arsenide in nitric solutions of the hydrobromic acid / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 80-83. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117925 |
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dspace |
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irk-123456789-1179252017-05-28T03:04:17Z Dissolution of indium arsenide in nitric solutions of the hydrobromic acid Tomashik, Z.F. Danylenko, S.G. Tomashik, V.N. Dissolution of InAs in HNO₃-HBr-H₂O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO₃]/[HBr] ratio, InAs dissolution may be limited by kinetic, or diffusion, or combined mechanisms. The dissolution rate of InSb in these solutions is rather low, and the etched surface is covered with a friable sediment. HNO₃ -HBr-H₂O solutions can be employed for a dynamic chemical polishing of InAs with a variable etching rate. 1999 Article Dissolution of indium arsenide in nitric solutions of the hydrobromic acid / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 80-83. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 81.65 C http://dspace.nbuv.gov.ua/handle/123456789/117925 620.193 : 546.681 19 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Dissolution of InAs in HNO₃-HBr-H₂O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO₃]/[HBr] ratio, InAs dissolution may be limited by kinetic, or diffusion, or combined mechanisms. The dissolution rate of InSb in these solutions is rather low, and the etched surface is covered with a friable sediment. HNO₃ -HBr-H₂O solutions can be employed for a dynamic chemical polishing of InAs with a variable etching rate. |
| format |
Article |
| author |
Tomashik, Z.F. Danylenko, S.G. Tomashik, V.N. |
| spellingShingle |
Tomashik, Z.F. Danylenko, S.G. Tomashik, V.N. Dissolution of indium arsenide in nitric solutions of the hydrobromic acid Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Tomashik, Z.F. Danylenko, S.G. Tomashik, V.N. |
| author_sort |
Tomashik, Z.F. |
| title |
Dissolution of indium arsenide in nitric solutions of the hydrobromic acid |
| title_short |
Dissolution of indium arsenide in nitric solutions of the hydrobromic acid |
| title_full |
Dissolution of indium arsenide in nitric solutions of the hydrobromic acid |
| title_fullStr |
Dissolution of indium arsenide in nitric solutions of the hydrobromic acid |
| title_full_unstemmed |
Dissolution of indium arsenide in nitric solutions of the hydrobromic acid |
| title_sort |
dissolution of indium arsenide in nitric solutions of the hydrobromic acid |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117925 |
| citation_txt |
Dissolution of indium arsenide in nitric solutions of the hydrobromic acid / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 80-83. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:30:55Z |
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2023-10-18T20:30:55Z |
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1796150402676162560 |