Silicon-on-insulator technology for microelectromechanical applications

A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of CMOS-MEMS integration for smart sensors are listed. Examples of successful use of...

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Бібліографічні деталі
Дата:1999
Автори: Usenko, A.Y., Carr, W.N.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117927
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Silicon-on-insulator technology for microelectromechanical applications / A.Y. Usenko, W.N. Carr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 93-97. — Бібліогр.: 19 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1179272017-05-28T03:04:09Z Silicon-on-insulator technology for microelectromechanical applications Usenko, A.Y. Carr, W.N. A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of CMOS-MEMS integration for smart sensors are listed. Examples of successful use of SOI to fabricate advanced MEMS are given and future prospects MEMS on SOI are evaluated. 1999 Article Silicon-on-insulator technology for microelectromechanical applications / A.Y. Usenko, W.N. Carr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 93-97. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 07.79.-v, 07.10.Pz,) 7.10 Cm, 07.07.Df, 85.40.Qx, 84.37.+q http://dspace.nbuv.gov.ua/handle/123456789/117927 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of CMOS-MEMS integration for smart sensors are listed. Examples of successful use of SOI to fabricate advanced MEMS are given and future prospects MEMS on SOI are evaluated.
format Article
author Usenko, A.Y.
Carr, W.N.
spellingShingle Usenko, A.Y.
Carr, W.N.
Silicon-on-insulator technology for microelectromechanical applications
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Usenko, A.Y.
Carr, W.N.
author_sort Usenko, A.Y.
title Silicon-on-insulator technology for microelectromechanical applications
title_short Silicon-on-insulator technology for microelectromechanical applications
title_full Silicon-on-insulator technology for microelectromechanical applications
title_fullStr Silicon-on-insulator technology for microelectromechanical applications
title_full_unstemmed Silicon-on-insulator technology for microelectromechanical applications
title_sort silicon-on-insulator technology for microelectromechanical applications
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url http://dspace.nbuv.gov.ua/handle/123456789/117927
citation_txt Silicon-on-insulator technology for microelectromechanical applications / A.Y. Usenko, W.N. Carr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 93-97. — Бібліогр.: 19 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT usenkoay silicononinsulatortechnologyformicroelectromechanicalapplications
AT carrwn silicononinsulatortechnologyformicroelectromechanicalapplications
first_indexed 2023-10-18T20:30:56Z
last_indexed 2023-10-18T20:30:56Z
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