Electro-physical properties of γ-exposed crystals of silicon and germanium
The paper represents a review of research data upon changing electrophysical properties of n-Si and n-Ge when radiation defects arise under action of different γ-irradiation doses. Analyzed are consequences of arising deep levels of radiation defects in the forbidden band of silicon and germanium, w...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| Дата: | 1999 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117933 |
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| Цитувати: | Electro-physical properties of γ-exposed crystals of silicon and germanium / Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 47-55. — Бібліогр.: 63 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117933 |
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dspace |
| spelling |
irk-123456789-1179332017-05-28T03:04:08Z Electro-physical properties of γ-exposed crystals of silicon and germanium Dotsenko, Yu. P. The paper represents a review of research data upon changing electrophysical properties of n-Si and n-Ge when radiation defects arise under action of different γ-irradiation doses. Analyzed are consequences of arising deep levels of radiation defects in the forbidden band of silicon and germanium, which leads to the considerable increase of resistivity gradients caused by non-uniform compensation of shallow donor centers. In addition, considered are characteristics of radiation defects energy levels which determine both regularities of electrophysical properties changes and peculiarities of tensoeffects in γ-irradiated crystals. It is noticed that neutron-doped n-Si (P) has larger radiation hardness in respect to γ-irradiation as sompared to silicon doped with phosphorus in the course of crystal growth. 1999 Article Electro-physical properties of γ-exposed crystals of silicon and germanium / Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 47-55. — Бібліогр.: 63 назв. — англ. 1560-8034 PACS 72.15.E, 72.20, 61.72.T, 72.80.C., 71.55.A http://dspace.nbuv.gov.ua/handle/123456789/117933 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The paper represents a review of research data upon changing electrophysical properties of n-Si and n-Ge when radiation defects arise under action of different γ-irradiation doses. Analyzed are consequences of arising deep levels of radiation defects in the forbidden band of silicon and germanium, which leads to the considerable increase of resistivity gradients caused by non-uniform compensation of shallow donor centers. In addition, considered are characteristics of radiation defects energy levels which determine both regularities of electrophysical properties changes and peculiarities of tensoeffects in γ-irradiated crystals. It is noticed that neutron-doped n-Si (P) has larger radiation hardness in respect to γ-irradiation as sompared to silicon doped with phosphorus in the course of crystal growth. |
| format |
Article |
| author |
Dotsenko, Yu. P. |
| spellingShingle |
Dotsenko, Yu. P. Electro-physical properties of γ-exposed crystals of silicon and germanium Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Dotsenko, Yu. P. |
| author_sort |
Dotsenko, Yu. P. |
| title |
Electro-physical properties of γ-exposed crystals of silicon and germanium |
| title_short |
Electro-physical properties of γ-exposed crystals of silicon and germanium |
| title_full |
Electro-physical properties of γ-exposed crystals of silicon and germanium |
| title_fullStr |
Electro-physical properties of γ-exposed crystals of silicon and germanium |
| title_full_unstemmed |
Electro-physical properties of γ-exposed crystals of silicon and germanium |
| title_sort |
electro-physical properties of γ-exposed crystals of silicon and germanium |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117933 |
| citation_txt |
Electro-physical properties of γ-exposed crystals of silicon and germanium / Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 47-55. — Бібліогр.: 63 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT dotsenkoyup electrophysicalpropertiesofgexposedcrystalsofsiliconandgermanium |
| first_indexed |
2023-10-18T20:30:57Z |
| last_indexed |
2023-10-18T20:30:57Z |
| _version_ |
1796150402040725504 |