Investigation of structural perfection of SiC ingots grown by a sublimation method
Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. The rate of growth varied between 0.3 and 1.5 mm/hour in the C-axis direction....
Збережено в:
| Дата: | 1999 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117937 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Investigation of structural perfection of SiC ingots grown by a sublimation method / S.F. Avramenko, V.S. Kiselev, M.Ya. Valakh, V.G. Visotski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 76-79. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117937 |
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irk-123456789-1179372017-05-28T03:04:07Z Investigation of structural perfection of SiC ingots grown by a sublimation method Avramenko, S.F. Kiselev, V.S. Valakh, M.Ya. Visotski, V.G. Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. The rate of growth varied between 0.3 and 1.5 mm/hour in the C-axis direction. At growth time of about 15 hours we obtained the ingots with 35 mm useful diameter. To determine the polytype composition of SiC ingots the Raman scattering technique was used. The structural defects were investigated by means of reflection and transmission light microscopy and by selective etching. In the best ingots the dislocation density did not exceed 102 cm⁻², the micropipe density - 10-20 cm⁻², and blocks were absent. 1999 Article Investigation of structural perfection of SiC ingots grown by a sublimation method / S.F. Avramenko, V.S. Kiselev, M.Ya. Valakh, V.G. Visotski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 76-79. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 81.05. C, D, E, G, H http://dspace.nbuv.gov.ua/handle/123456789/117937 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. The rate of growth varied between 0.3 and 1.5 mm/hour in the C-axis direction. At growth time of about 15 hours we obtained the ingots with 35 mm useful diameter. To determine the polytype composition of SiC ingots the Raman scattering technique was used. The structural defects were investigated by means of reflection and transmission light microscopy and by selective etching. In the best ingots the dislocation density did not exceed 102 cm⁻², the micropipe density - 10-20 cm⁻², and blocks were absent. |
| format |
Article |
| author |
Avramenko, S.F. Kiselev, V.S. Valakh, M.Ya. Visotski, V.G. |
| spellingShingle |
Avramenko, S.F. Kiselev, V.S. Valakh, M.Ya. Visotski, V.G. Investigation of structural perfection of SiC ingots grown by a sublimation method Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Avramenko, S.F. Kiselev, V.S. Valakh, M.Ya. Visotski, V.G. |
| author_sort |
Avramenko, S.F. |
| title |
Investigation of structural perfection of SiC ingots grown by a sublimation method |
| title_short |
Investigation of structural perfection of SiC ingots grown by a sublimation method |
| title_full |
Investigation of structural perfection of SiC ingots grown by a sublimation method |
| title_fullStr |
Investigation of structural perfection of SiC ingots grown by a sublimation method |
| title_full_unstemmed |
Investigation of structural perfection of SiC ingots grown by a sublimation method |
| title_sort |
investigation of structural perfection of sic ingots grown by a sublimation method |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117937 |
| citation_txt |
Investigation of structural perfection of SiC ingots grown by a sublimation method / S.F. Avramenko, V.S. Kiselev, M.Ya. Valakh, V.G. Visotski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 76-79. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:30:57Z |
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