Investigation of structural perfection of SiC ingots grown by a sublimation method

Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. The rate of growth varied between 0.3 and 1.5 mm/hour in the C-axis direction....

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Дата:1999
Автори: Avramenko, S.F., Kiselev, V.S., Valakh, M.Ya., Visotski, V.G.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117937
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Investigation of structural perfection of SiC ingots grown by a sublimation method / S.F. Avramenko, V.S. Kiselev, M.Ya. Valakh, V.G. Visotski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 76-79. — Бібліогр.: 11 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1179372017-05-28T03:04:07Z Investigation of structural perfection of SiC ingots grown by a sublimation method Avramenko, S.F. Kiselev, V.S. Valakh, M.Ya. Visotski, V.G. Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. The rate of growth varied between 0.3 and 1.5 mm/hour in the C-axis direction. At growth time of about 15 hours we obtained the ingots with 35 mm useful diameter. To determine the polytype composition of SiC ingots the Raman scattering technique was used. The structural defects were investigated by means of reflection and transmission light microscopy and by selective etching. In the best ingots the dislocation density did not exceed 102 cm⁻², the micropipe density - 10-20 cm⁻², and blocks were absent. 1999 Article Investigation of structural perfection of SiC ingots grown by a sublimation method / S.F. Avramenko, V.S. Kiselev, M.Ya. Valakh, V.G. Visotski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 76-79. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 81.05. C, D, E, G, H http://dspace.nbuv.gov.ua/handle/123456789/117937 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. The rate of growth varied between 0.3 and 1.5 mm/hour in the C-axis direction. At growth time of about 15 hours we obtained the ingots with 35 mm useful diameter. To determine the polytype composition of SiC ingots the Raman scattering technique was used. The structural defects were investigated by means of reflection and transmission light microscopy and by selective etching. In the best ingots the dislocation density did not exceed 102 cm⁻², the micropipe density - 10-20 cm⁻², and blocks were absent.
format Article
author Avramenko, S.F.
Kiselev, V.S.
Valakh, M.Ya.
Visotski, V.G.
spellingShingle Avramenko, S.F.
Kiselev, V.S.
Valakh, M.Ya.
Visotski, V.G.
Investigation of structural perfection of SiC ingots grown by a sublimation method
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Avramenko, S.F.
Kiselev, V.S.
Valakh, M.Ya.
Visotski, V.G.
author_sort Avramenko, S.F.
title Investigation of structural perfection of SiC ingots grown by a sublimation method
title_short Investigation of structural perfection of SiC ingots grown by a sublimation method
title_full Investigation of structural perfection of SiC ingots grown by a sublimation method
title_fullStr Investigation of structural perfection of SiC ingots grown by a sublimation method
title_full_unstemmed Investigation of structural perfection of SiC ingots grown by a sublimation method
title_sort investigation of structural perfection of sic ingots grown by a sublimation method
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url http://dspace.nbuv.gov.ua/handle/123456789/117937
citation_txt Investigation of structural perfection of SiC ingots grown by a sublimation method / S.F. Avramenko, V.S. Kiselev, M.Ya. Valakh, V.G. Visotski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 76-79. — Бібліогр.: 11 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT kiselevvs investigationofstructuralperfectionofsicingotsgrownbyasublimationmethod
AT valakhmya investigationofstructuralperfectionofsicingotsgrownbyasublimationmethod
AT visotskivg investigationofstructuralperfectionofsicingotsgrownbyasublimationmethod
first_indexed 2023-10-18T20:30:57Z
last_indexed 2023-10-18T20:30:57Z
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