Electron emission modulation effects in micro-size structures
A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation generation, has been investigated and analyzed. The mechanisms are connected with...
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Дата: | 2003 |
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Автор: | |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117943 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Electron emission modulation effects in micro-size structures / H. Hartnagel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 62-67. — Бібліогр.: 16 назв. — англ. |
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irk-123456789-1179432017-05-28T03:04:38Z Electron emission modulation effects in micro-size structures Hartnagel, H. A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation generation, has been investigated and analyzed. The mechanisms are connected with the generation of oscillations in field emission structures (i) based on the silicon or GaAs tips with ultrathin diamond-like carbon (DLC) films, (ii) III-V semiconductors (GaAs, GaN) and (iii) SiGe materials. 2003 Article Electron emission modulation effects in micro-size structures / H. Hartnagel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 62-67. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 79.70.+q http://dspace.nbuv.gov.ua/handle/123456789/117943 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation generation, has been investigated and analyzed. The mechanisms are connected with the generation of oscillations in field emission structures (i) based on the silicon or GaAs tips with ultrathin diamond-like carbon (DLC) films, (ii) III-V semiconductors (GaAs, GaN) and (iii) SiGe materials. |
format |
Article |
author |
Hartnagel, H. |
spellingShingle |
Hartnagel, H. Electron emission modulation effects in micro-size structures Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Hartnagel, H. |
author_sort |
Hartnagel, H. |
title |
Electron emission modulation effects in micro-size structures |
title_short |
Electron emission modulation effects in micro-size structures |
title_full |
Electron emission modulation effects in micro-size structures |
title_fullStr |
Electron emission modulation effects in micro-size structures |
title_full_unstemmed |
Electron emission modulation effects in micro-size structures |
title_sort |
electron emission modulation effects in micro-size structures |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2003 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/117943 |
citation_txt |
Electron emission modulation effects in micro-size structures / H. Hartnagel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 62-67. — Бібліогр.: 16 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT hartnagelh electronemissionmodulationeffectsinmicrosizestructures |
first_indexed |
2023-10-18T20:30:58Z |
last_indexed |
2023-10-18T20:30:58Z |
_version_ |
1796150403840081920 |