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Electron emission modulation effects in micro-size structures

Electron emission modulation effects in micro-size structures

A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation generation, has been investigated and analyzed. The mechanisms are connected with...

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Main Author: Hartnagel, H.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117943
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spelling irk-123456789-1179432017-05-28T03:04:38Z Electron emission modulation effects in micro-size structures Hartnagel, H. A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation generation, has been investigated and analyzed. The mechanisms are connected with the generation of oscillations in field emission structures (i) based on the silicon or GaAs tips with ultrathin diamond-like carbon (DLC) films, (ii) III-V semiconductors (GaAs, GaN) and (iii) SiGe materials. 2003 Article Electron emission modulation effects in micro-size structures / H. Hartnagel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 62-67. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 79.70.+q http://dspace.nbuv.gov.ua/handle/123456789/117943 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation generation, has been investigated and analyzed. The mechanisms are connected with the generation of oscillations in field emission structures (i) based on the silicon or GaAs tips with ultrathin diamond-like carbon (DLC) films, (ii) III-V semiconductors (GaAs, GaN) and (iii) SiGe materials.
format Article
author Hartnagel, H.
spellingShingle Hartnagel, H.
Electron emission modulation effects in micro-size structures
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Hartnagel, H.
author_sort Hartnagel, H.
title Electron emission modulation effects in micro-size structures
title_short Electron emission modulation effects in micro-size structures
title_full Electron emission modulation effects in micro-size structures
title_fullStr Electron emission modulation effects in micro-size structures
title_full_unstemmed Electron emission modulation effects in micro-size structures
title_sort electron emission modulation effects in micro-size structures
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/117943
citation_txt Electron emission modulation effects in micro-size structures / H. Hartnagel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 62-67. — Бібліогр.: 16 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT hartnagelh electronemissionmodulationeffectsinmicrosizestructures
first_indexed 2023-10-18T20:30:58Z
last_indexed 2023-10-18T20:30:58Z
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