The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors
It is shown that under influence of irreversible gigantic modification in monocrystalline A³B³ and A²B⁶ semiconductors, local areas with the highly changed refractive index are created. It was shown that a complex refraction index of CdS, CdTe and GaAs semiconductor samples after their modification...
Збережено в:
| Дата: | 2003 |
|---|---|
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117957 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors / A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 86-90. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117957 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1179572017-05-28T03:04:37Z The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. It is shown that under influence of irreversible gigantic modification in monocrystalline A³B³ and A²B⁶ semiconductors, local areas with the highly changed refractive index are created. It was shown that a complex refraction index of CdS, CdTe and GaAs semiconductor samples after their modification was essentially changed. For example, the complex refraction index of CdS samples was changed from the magnitude N = 2.75 + i2.8113 up to the magnitude N1 = 1.9 + i0.035. In addition, the real and imaginary parts of a complex refraction index of CdS decrease, accordingly, by 0.85 and 2.7763. And its absorption index was 80-fold decreased. The theoretical analysis of experimental results has shown that quantum dots and quantum wires are responsible for such huge changes of the refractive index, which arise in modified areas of samples. It was shown that boundaries between modified and non-modified areas of the sample stretch down to the depth not less than 11mm. It was shown that photon crystals with one-dimensionality and two-dimensionality can be effectively formed for visible and ultra-violet ranges without using the complex lithographical technique. 2003 Article The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors / A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 86-90. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 42.70.Qs http://dspace.nbuv.gov.ua/handle/123456789/117957 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
It is shown that under influence of irreversible gigantic modification in monocrystalline A³B³ and A²B⁶ semiconductors, local areas with the highly changed refractive index are created. It was shown that a complex refraction index of CdS, CdTe and GaAs semiconductor samples after their modification was essentially changed. For example, the complex refraction index of CdS samples was changed from the magnitude N = 2.75 + i2.8113 up to the magnitude N1 = 1.9 + i0.035. In addition, the real and imaginary parts of a complex refraction index of CdS decrease, accordingly, by 0.85 and 2.7763. And its absorption index was 80-fold decreased. The theoretical analysis of experimental results has shown that quantum dots and quantum wires are responsible for such huge changes of the refractive index, which arise in modified areas of samples. It was shown that boundaries between modified and non-modified areas of the sample stretch down to the depth not less than 11mm. It was shown that photon crystals with one-dimensionality and two-dimensionality can be effectively formed for visible and ultra-violet ranges without using the complex lithographical technique. |
| format |
Article |
| author |
Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. |
| spellingShingle |
Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. |
| author_sort |
Kamuz, A.M. |
| title |
The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors |
| title_short |
The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors |
| title_full |
The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors |
| title_fullStr |
The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors |
| title_full_unstemmed |
The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors |
| title_sort |
way of photonic crystal formation in a³b³ and a²b⁶ semiconductors |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117957 |
| citation_txt |
The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors / A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 86-90. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT kamuzam thewayofphotoniccrystalformationina3b3anda2b6semiconductors AT oleksenkopph thewayofphotoniccrystalformationina3b3anda2b6semiconductors AT kamuzoa thewayofphotoniccrystalformationina3b3anda2b6semiconductors AT kamuzvg thewayofphotoniccrystalformationina3b3anda2b6semiconductors AT kamuzam wayofphotoniccrystalformationina3b3anda2b6semiconductors AT oleksenkopph wayofphotoniccrystalformationina3b3anda2b6semiconductors AT kamuzoa wayofphotoniccrystalformationina3b3anda2b6semiconductors AT kamuzvg wayofphotoniccrystalformationina3b3anda2b6semiconductors |
| first_indexed |
2023-10-18T20:30:59Z |
| last_indexed |
2023-10-18T20:30:59Z |
| _version_ |
1796150404794286080 |